Advanced Contact Technology for MOSFETs: Integration of New Materials for Series Resistance Reduction

被引：0
|
作者：
Yeo, Yee-Chia [1 ]
Lee, Rinus T. -P. [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
来源：
ULSI PROCESS INTEGRATION 6 | 2009年 / 25卷 / 07期
关键词：
SCHOTTKY-BARRIER HEIGHT; SILICON-CARBON SOURCE/DRAIN; N-CHANNEL FINFETS; ALUMINUM SEGREGATION; PERFORMANCE; ENHANCEMENT; SELENIUM; SULFUR; MODEL;
D O I：
10.1149/1.3203967
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this paper, new technology solutions for reducing contact resistance to enhance MOSFET drive current performance are discussed. We focus on several new approaches pioneered by our group for reducing electron and hole barrier heights between the heavily-doped diffusion region and the silicide layer in n-FET and p-FET, respectively. Integration of these approaches in advanced device architectures would contribute to the realization of high-performance CMOS devices.
引用
收藏
页码：291 / 302
页数：12
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