Advanced Contact Technology for MOSFETs: Integration of New Materials for Series Resistance Reduction

被引：0
|
作者：
Yeo, Yee-Chia [1 ]
Lee, Rinus T. -P. [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
来源：
ULSI PROCESS INTEGRATION 6 | 2009年 / 25卷 / 07期
关键词：
SCHOTTKY-BARRIER HEIGHT; SILICON-CARBON SOURCE/DRAIN; N-CHANNEL FINFETS; ALUMINUM SEGREGATION; PERFORMANCE; ENHANCEMENT; SELENIUM; SULFUR; MODEL;
D O I：
10.1149/1.3203967
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this paper, new technology solutions for reducing contact resistance to enhance MOSFET drive current performance are discussed. We focus on several new approaches pioneered by our group for reducing electron and hole barrier heights between the heavily-doped diffusion region and the silicide layer in n-FET and p-FET, respectively. Integration of these approaches in advanced device architectures would contribute to the realization of high-performance CMOS devices.
引用
收藏
页码：291 / 302
页数：12
相关论文
共 50 条
  • [31] NEW DIRECTIONS IN HYDRATE TECHNOLOGY APPLICATIONS TO BIOTECHNOLOGY AND ADVANCED MATERIALS
    JOHN, VT
    KOMMAREDDI, NS
    AYYAGARI, MS
    TATA, M
    KARAYIGITOGLU, CF
    MCPHERSON, GL
    INTERNATIONAL CONFERENCE ON NATURAL GAS HYDRATES, 1994, 715 : 468 - 480
  • [32] POLY 59-New polymerization technology for advanced materials
    Ness, Jason
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2008, 235
  • [33] A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs
    Chen, William P. N.
    Su, P.
    Wang, J. S.
    Lien, C. H.
    Chang, C. H.
    Goto, K.
    Diaz, C. H.
    2006 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS, 2006, : 143 - +
  • [34] Integration of Novel Materials and Advanced Genomic Technologies into New Vaccine Design
    Liao, Wenzhen
    Zhang, Tian-Tian
    Gao, Liqian
    Lee, Su Seong
    Xu, Jie
    Zhang, Han
    Yang, Zhaogang
    Liu, Zhaoyu
    Li, Wen
    CURRENT TOPICS IN MEDICINAL CHEMISTRY, 2017, 17 (20) : 2286 - 2301
  • [35] Materials Technology Co-optimization of Self-Aligned Gate Contact for Advanced CMOS Technology Nodes
    Pal, A.
    Ferrell, J.
    Sachid, A.
    Bazizi, E. M.
    Cui, D.
    Wang, A.
    Cogorno, M.
    Bhatnagar, A.
    Ingle, N.
    Xu, Y.
    Lei, W.
    Lei, Y.
    Gelatos, A.
    Ha, T. H.
    Kashefizadeh, K.
    Seutter, S. M.
    Sato, T. E.
    Brown, B.
    Mikhaylichenko, K.
    Lee, C.
    Fung, N.
    Xu, W.
    Kawasaki, M.
    Luu, T.
    Wang, P.
    Colombeau, B.
    Alexander, B.
    Hwang, D.
    Natarajan, S.
    Ayyagari, B.
    2020 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 2020,
  • [36] New technology for measuring resistance of electrical contact and estimating welding quality
    Shiliang, Z.
    Zhongdian, Z.
    Qiwei, L.
    Yujun, X.
    Xiubo, T.
    SCIENCE AND TECHNOLOGY OF WELDING AND JOINING, 2016, 21 (03) : 201 - 208
  • [37] Selection and Evaluation of Thermal Interface Materials for Reduction of the Thermal Contact Resistance of Thermoelectric Generators
    Tatsuya Sakamoto
    Tsutomu Iida
    Takeshi Sekiguchi
    Yutaka Taguchi
    Naomi Hirayama
    Keishi Nishio
    Yoshifumi Takanashi
    Journal of Electronic Materials, 2014, 43 : 3792 - 3800
  • [38] Selection and Evaluation of Thermal Interface Materials for Reduction of the Thermal Contact Resistance of Thermoelectric Generators
    Sakamoto, Tatsuya
    Iida, Tsutomu
    Sekiguchi, Takeshi
    Taguchi, Yutaka
    Hirayama, Naomi
    Nishio, Keishi
    Takanashi, Yoshifumi
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (10) : 3792 - 3800
  • [39] Low-resistance silicon-germanium contact technology for modular integration of MEMS with electronics
    Eyoum, MA
    King, TJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (03) : J21 - J25
  • [40] Reduction of Electrical Resistance of Active Materials for Lithium-ion Secondary Batteries by Making Contact with Carbon Materials
    Ito, Tomohiro
    Tachibana, Kazuhiro
    Yamamoto, Yoshihisa
    Nishina, Tatsuo
    ELECTROCHEMISTRY, 2022, 90 (08)
12345