A Comparative Study of High Frequency Characteristics of SiC-Based DDR and SDR IMPATTs

被引：1
|
作者：
Parida, R. K. [1 ]
Panda, A. K. [2 ]
机构：
[1] Siksha O Anusandhan Univ, ITER, Dept Phys, Bhubaneswar 751030, Orissa, India
[2] Natl Inst Sci & Technol NIST, Berhampur 761008, Odisha, India
来源：
ADVANCED SCIENCE LETTERS | 2014年 / 20卷 / 3-4期
关键词：
IMPATT Diodes; DDR; SDR; SiC; High-Frequency;
D O I：
10.1166/asl.2014.5427
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Impact avalanche transit time (IMPATT) diodes are the most powerful solid-state sources to generate mm and sub-mm-wave frequencies. Various properties of SiC-based DDR and SDR IMPATTs are compared which operates at high-frequency region. Both the structures are capable of operating at D-band frequency. The data are obtained from a generalized computer simulation method. The results obtained in this paper may be used as first hand information for experimentalists.
引用
收藏
页码：668 / 670
页数：3
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