A Comparative Study of High Frequency Characteristics of SiC-Based DDR and SDR IMPATTs

被引：1

作者：

Parida, R. K. ^{[1
]}

Panda, A. K. ^{[2
]}

机构：

[1] Siksha O Anusandhan Univ, ITER, Dept Phys, Bhubaneswar 751030, Orissa, India

[2] Natl Inst Sci & Technol NIST, Berhampur 761008, Odisha, India

来源：

ADVANCED SCIENCE LETTERS | 2014年 / 20卷 / 3-4期

关键词：

IMPATT Diodes; DDR; SDR; SiC; High-Frequency;

D O I：

10.1166/asl.2014.5427

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Impact avalanche transit time (IMPATT) diodes are the most powerful solid-state sources to generate mm and sub-mm-wave frequencies. Various properties of SiC-based DDR and SDR IMPATTs are compared which operates at high-frequency region. Both the structures are capable of operating at D-band frequency. The data are obtained from a generalized computer simulation method. The results obtained in this paper may be used as first hand information for experimentalists.

引用

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页码：668 / 670

页数：3

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