A Comparative Study of High Frequency Characteristics of SiC-Based DDR and SDR IMPATTs

被引：1
|
作者：
Parida, R. K. [1 ]
Panda, A. K. [2 ]
机构：
[1] Siksha O Anusandhan Univ, ITER, Dept Phys, Bhubaneswar 751030, Orissa, India
[2] Natl Inst Sci & Technol NIST, Berhampur 761008, Odisha, India
来源：
ADVANCED SCIENCE LETTERS | 2014年 / 20卷 / 3-4期
关键词：
IMPATT Diodes; DDR; SDR; SiC; High-Frequency;
D O I：
10.1166/asl.2014.5427
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Impact avalanche transit time (IMPATT) diodes are the most powerful solid-state sources to generate mm and sub-mm-wave frequencies. Various properties of SiC-based DDR and SDR IMPATTs are compared which operates at high-frequency region. Both the structures are capable of operating at D-band frequency. The data are obtained from a generalized computer simulation method. The results obtained in this paper may be used as first hand information for experimentalists.
引用
下载
收藏
页码：668 / 670
页数：3
相关论文
共 50 条
  • [21] SiC-Based High Efficiency High Gain Boost Converter for PV Application
    Almasoudi, Fahad M.
    Matin, Mohammad
    Gao, Wenzhong
    2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRO/INFORMATION TECHNOLOGY (EIT), 2018, : 626 - 631
  • [22] SIC-based decoding algorithm for space-frequency coded transmitter diversity
    Xu, B
    Yang, CY
    Mao, SY
    57TH IEEE VEHICULAR TECHNOLOGY CONFERENCE, VTC 2003-SPRING, VOLS 1-4, PROCEEDINGS, 2003, : 755 - 758
  • [23] Study on SiC-based grain boundary barrier layer capacitor
    Qin Dandan
    Qiao Jianfang
    Shao Gang
    Wang Hailong
    Xu Hongliang
    Lu Hongxia
    Zhang Rui
    RARE METAL MATERIALS AND ENGINEERING, 2007, 36 : 442 - 444
  • [24] Motor Bearing Current Characterization in SiC-based Variable Frequency Drive Applications
    von Jouanne, Annette
    Collin, Ryan
    Stephens, Madeline
    Miao, Yu
    Thayil, Brian
    Li, Caleb
    Agamloh, Emmanuel
    Yokochi, Alex
    2020 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2020, : 2718 - 2725
  • [25] Experimental study of SiC-based ablation products in high-temperature plasma-jets
    Funatsu, M.
    Shirai, H.
    SHOCK WAVES, VOL 1, PROCEEDINGS, 2009, : 445 - +
  • [26] Effects of Charge Bump on High-Frequency Characteristics of α-SiC-based Double-drift ATT Diodes at Millimeter-wave Window Frequencies
    Mukherjee, Moumita
    Mazumder, Nilratan
    IETE JOURNAL OF RESEARCH, 2009, 55 (03) : 118 - 127
  • [27] A High-Voltage SiC-Based Boost PFC for LED Applications
    Leon-Masich, Antonio
    Valderrama-Blavi, Hugo
    Bosque-Moncusi, Josep M.
    Martinez-Salamero, Luis
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2016, 31 (02) : 1633 - 1642
  • [28] Ruthenium as Schottky metal for SiC-based high temperature hydrogen sensors
    Basu, S
    Roy, S
    Jacob, C
    MATERIALS AND TECHNOLOGY FOR HYDROGEN ECONOMY, 2004, 801 : 193 - 198
  • [29] SiC-based MIS gas sensor for high water vapor environments
    Casals, Olga
    Becker, Thomas
    Godignon, Philippe
    Romano-Rodriguez, Albert
    SENSORS AND ACTUATORS B-CHEMICAL, 2012, 175 : 60 - 66
  • [30] SiC-Based MIS Gas Sensor for High Water Vapor Environments
    Casals, O.
    Becker, Th.
    Godignon, P.
    Romano-Rodriguez, A.
    EUROSENSORS XXV, 2011, 25
12345