A comparative study on the high band gap materials (GaN and SiC)- based IMPATTs

被引：0
|
作者：
Panda, A. K. [1 ]
Parida, R. K. [2 ]
Agrawala, N. C. [3 ]
Dash, G. N. [4 ]
机构：
[1] NIST, Dept ECE, Berhampur 761008, Orissa, India
[2] ITER, Dept ECE, Bhubaneswar 750010, Orissa, India
[3] Esurajmal Coll, Dept Phys, Sambalpur 768212, Orissa, India
[4] Sambalpur Univ, Dept Phys, Sambalpur 768019, Orissa, India
来源：
2007 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5 | 2007年
关键词：
IMPATT diodes; Gallium Nitride; Impact Ionization; SiC; high-frequency;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dynamic characteristics of GaN and SiC-based IMPATTs are reported at D-band and the device properties are compared at the game operating conditions and frequency of operations. A noise analysis model was also employed for performing the studies. The noise of GaN-based IMPATTs is found to be higher than that of SiC-based IMPATTs. It is shown that high bandgap semiconductor material based IMPATTs are potential candidates for replacing traditional IMPATTs at high frequency of operation.
引用
收藏
页码：2043 / +
页数：2
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