A Comparative Study of High Frequency Characteristics of SiC-based SDRs

被引：0

作者：

Parida, R. K. ^{[1
]}

Panda, A. K. ^{[2
]}

Dash, G. N. ^{[3
]}

机构：

[1] Siksha O Anusandhan Univ, ITER, Bhubaneswar 751030, Odisha, India

[2] Natl Inst Sci & Technol, Palur Hills, Berhampur 761008, Odisha, India

[3] Sambalpur Univ, Sch Phys, Burla 768019, Odisha, India

来源：

16TH INTERNATIONAL WORKSHOP ON PHYSICS OF SEMICONDUCTOR DEVICES | 2012年 / 8549卷

关键词：

IMPATT diodes; Impact Ionization; SiC; high-frequency; Noise; Power; GAN-BASED IMPATTS; DIODE; NOISE;

D O I：

10.1117/12.925107

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A model is developed to study SiC-based IMPATTs to operate at D-band frequency and the device properties of 3C, 4H, 6H-SiC based SDR IMPATTs are compared at the same operating conditions and frequency of operations. A noise analysis model is also developed to compare the noise characteristics of 3C, 4H and 6H SiC-based SDR IMPATTs. The results show that 3C-SiC based SDR IMPATTs have better power delivery capability whereas 4H SiC-based SDR IMPATTs are less noisy. When a power noise tradeoff consider, it is seen that 4H SiC-based SDR IMPATTs have better Noise Measure than the other two polytypes. These results can be used as the first hand information by the experimentalist.

引用

页数：7

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