Surface morphology of GaN grown by molecular beam epitaxy

被引：14
|
作者：
Vézian, S [1 ]
Massies, J [1 ]
Semond, F [1 ]
Grandjean, N [1 ]
机构：
[1] Ctr Rech Hetero Epitaxie & Applicat, CNRS, F-06560 Valbonne, France
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 82卷 / 1-3期
关键词：
AFM; GaN; MBE; STM; surface morphology;
D O I：
10.1016/S0921-5107(00)00707-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The surface morphology of GaN(0001) grown on Si(111) by molecular beam epitaxy using ammonia has been studied by near-field microscopy techniques. Two distinct morphologies are observed, depending on the growth kinetics. When using Ga-rich growth conditions, the roughness is independent of the epitaxial layer thickness, while it increases with growth time under N-rich growth conditions. Also, the morphological pattern is different for the two regimes of growth and is not related to the crystallographic subgrains delimited by edge dislocations. However, under Ga-rich growth conditions, screw-type dislocations give rise to a spiral growth mode that imposts both the morphological pattern and the surface roughness. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：56 / 58
页数：3
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