GaN nanocolumns on Si(III) grown by molecular beam epitaxy

被引：0

作者：

Calarco, R ^{[1
]}

Marso, K ^{[1
]}

Meijers, R ^{[1
]}

Richter, T ^{[1
]}

Aykanat, AI ^{[1
]}

Stoica, T ^{[1
]}

Lüth, H ^{[1
]}

机构：

[1] ISGI, D-52425 Julich, Germany

来源：

ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN nanocolumns are reproducibly grown by Plasma-assisted molecular beam epitaxy on Si(111). The nanocolumn density and diameter, 20-150 nm, are controlled by means of the III/V ratio. The nanocolumns grow parallel to the [111] direction of the Si substrate. The columns have been transferred to a Si(100) substrate covered with a layer of 300nm SiO2. Single nanowire devices have been fabricated using finger shaped electrical contacts (Ti/Au) obtained by e-beam patterning technique. The electrical transport properties of the resulting metal-semiconductor-metal nanostructures are analyzed by means of current-voltage measurements in dark and under UV-illumination.

引用

页码：9 / 12

页数：4

共 50 条

[1] Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy
Cerutti, L.
Ristic, J.
Fernandez-Garrido, S.
Calleja, E.
Trampert, A.
Ploog, K. H.
Lazic, S.
Calleja, J. M.
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (21)
[2] Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
Calleja, E
Sánchez-García, MA
Sánchez, FJ
Calle, F
Naranjo, FB
Muñoz, E
Jahn, U
Ploog, K
[J]. PHYSICAL REVIEW B, 2000, 62 (24) : 16826 - 16834
[3] Effect of N2* and N on GaN nanocolumns grown on Si(111) by molecular beam epitaxy
Debnath, A.
Gandhi, J. S.
Kesaria, M.
Pillai, R.
Starikov, D.
Bensaoula, A.
[J]. JOURNAL OF APPLIED PHYSICS, 2016, 119 (10)
[4] AlGaN nanocolumns and AlGaN/GaN/AlGaN nanostructures grown by molecular beam epitaxy
Ristic, J
Sánchez-García, MA
Ulloa, JM
Calleja, E
Sanchez-Páramo, J
Calleja, JM
Jahn, U
Trampert, A
Ploog, KH
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 234 (03): : 717 - 721
[5] Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates
Corfdir, P.
Lefebvre, P.
Ristic, J.
Valvin, P.
Calleja, E.
Trampert, A.
Ganiere, J. -D.
Deveaud-Pledran, B.
[J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (01)
[6] Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy
Grandal, J.
Sanchez-Garcia, M. A.
Calleja, E.
Luna, E.
Trampert, A.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (02)
[7] Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy
Na, JH
Taylor, RA
Rice, JH
Robinson, JW
Lee, KH
Park, YS
Park, CM
Kang, TW
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (12) : 1 - 3
[8] A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
Fernandez-Garrido, S.
Grandal, J.
Calleja, E.
Sanchez-Garcia, M. A.
Lopez-Romero, D.
[J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)
[9] InN nanocolumns grown by molecular beam epitaxy and their luminescence properties
Wang, K.
Araki, T.
Yamaguchi, T.
Chen, Y. T.
Yoon, E.
Nanishi, Y.
[J]. JOURNAL OF CRYSTAL GROWTH, 2015, 430 : 93 - 97
[10] Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates
Albert, S.
Bengoechea-Encabo, A.
Lefebvre, P.
Sanchez-Garcia, M. A.
Calleja, E.
Jahn, U.
Trampert, A.
[J]. APPLIED PHYSICS LETTERS, 2011, 99 (13)

← 1 2 3 4 5 →