Surface morphology of GaN grown by molecular beam epitaxy

被引：14

作者：

Vézian, S ^{[1
]}

Massies, J ^{[1
]}

Semond, F ^{[1
]}

Grandjean, N ^{[1
]}

机构：

[1] Ctr Rech Hetero Epitaxie & Applicat, CNRS, F-06560 Valbonne, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 82卷 / 1-3期

关键词：

AFM; GaN; MBE; STM; surface morphology;

D O I：

10.1016/S0921-5107(00)00707-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The surface morphology of GaN(0001) grown on Si(111) by molecular beam epitaxy using ammonia has been studied by near-field microscopy techniques. Two distinct morphologies are observed, depending on the growth kinetics. When using Ga-rich growth conditions, the roughness is independent of the epitaxial layer thickness, while it increases with growth time under N-rich growth conditions. Also, the morphological pattern is different for the two regimes of growth and is not related to the crystallographic subgrains delimited by edge dislocations. However, under Ga-rich growth conditions, screw-type dislocations give rise to a spiral growth mode that imposts both the morphological pattern and the surface roughness. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：56 / 58

页数：3

共 50 条

[41] Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN
[J]. 1600, (American Institute of Physics Inc.):
[42] Arsenic-doped GaN grown by molecular beam epitaxy
Foxon, CT
Novikov, SV
Cheng, TS
Davis, CS
Campion, RP
Winser, AJ
Harrison, I
[J]. JOURNAL OF CRYSTAL GROWTH, 2000, 219 (04) : 327 - 334
[43] Er-doped GaN grown by molecular beam epitaxy
Ng, HM
[J]. STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XXXVI AND WIDE BANDGAP SEMICONDUCTORS FOR PHOTONIC AND ELECTRONIC DEVICES AND SENSORS II, 2002, 2002 (03): : 64 - 69
[44] A study of cracking in GaN grown on silicon by molecular beam epitaxy
R. Jothilingam
M. W. Koch
J. B. Posthill
G. W. Wicks
[J]. Journal of Electronic Materials, 2001, 30 : 821 - 824
[45] Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template
Reshchikov, MA
Huang, D
Yun, F
He, L
Morkoç, H
Reynolds, DC
Park, SS
Lee, KY
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (23) : 3779 - 3781
[46] Crystal morphology and optical emissions of GaN layers grown on Si(111) substrates by molecular beam epitaxy
Sanchez-Garcia, MA
Sanchez, FJ
Naranjo, FB
Calle, F
Calleja, E
Munoz, E
Jahn, U
Ploog, KH
[J]. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1998, 3 (32):
[47] Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy
Brubaker, Matt D.
Levin, Igor
Davydov, Albert V.
Rourke, Devin M.
Sanford, Norman A.
Bright, Victor M.
Bertness, Kris A.
[J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (05)
[48] Effects of Ga-flux on Optical Properties and Morphology of GaN Grown via Molecular Beam Epitaxy
Zsebk O.
[J]. Chemical Research in Chinese Universities, 2004, (06) : 747 - 750
[49] Effects of Ga-flux on optical properties and morphology of GaN grown via molecular beam epitaxy
Yang, JH
Gong, J
Fan, HG
Yang, LL
Zhang, YJ
Zsebök, O
Chen, G
[J]. CHEMICAL RESEARCH IN CHINESE UNIVERSITIES, 2004, 20 (06) : 747 - 750
[50] Imaging of defect-mediated surface morphology of GaN(000(1)over-bar) grown on sapphire by molecular beam epitaxy
Liu, B
Leone, SR
Kitajima, T
Zhang, TH
Borca, C
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (02)

← 1 2 3 4 5 →