Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy

被引：99

作者：

Bertness, Kris A. ^{[1
]}

Sanders, Aric W. ^{[1
]}

Rourke, Devin M. ^{[1
]}

Harvey, Todd E. ^{[1
]}

Roshko, Alexana ^{[1
]}

Schlager, John B. ^{[1
]}

Sanford, Norman A. ^{[1
]}

机构：

[1] NIST, Boulder, CO 80305 USA

来源：

ADVANCED FUNCTIONAL MATERIALS | 2010年 / 20卷 / 17期

关键词：

D O I：

10.1002/adfm.201000381

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The location of GaN nanowires is controlled with essentially perfect selectivity using patterned SiNx prior to molecular beam epitaxy growth. Nanowire growth is uniform within mask openings and absent on the mask surface for over 95% of the usable area of a 76 mm diameter substrate. The diameters of the resulting nanowires are controlled by the size of the mask openings. Openings of approximately 500 nm or less produce single nanowires with symmetrically faceted tips.

引用

页码：2911 / 2915

页数：5

共 50 条

[1] Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy
Landre, O.
Bougerol, C.
Renevier, H.
Daudin, B.
[J]. NANOTECHNOLOGY, 2009, 20 (41)
[2] GaN Nanowires Grown by Molecular Beam Epitaxy
Bertness, Kris A.
Sanford, Norman A.
Davydov, Albert V.
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 17 (04) : 847 - 858
[3] Properties of GaN Nanowires Grown by Molecular Beam Epitaxy
Geelhaar, Lutz
Cheze, Caroline
Jenichen, Bernd
Brandt, Oliver
Pfueller, Carsten
Muench, Steffen
Rothemund, Ralph
Reitzenstein, Stephan
Forchel, Alfred
Kehagias, Thomas
Komninou, Philomela
Dimitrakopulos, George P.
Karakostas, Theodoros
Lari, Leonardo
Chalker, Paul R.
Gass, Mhairi H.
Riechert, Henning
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 17 (04) : 878 - 888
[4] Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature
Mata, Rafael
Hestroffer, Karine
Budagosky, Jorge
Cros, Ana
Bougerol, Catherine
Renevier, Hubert
Daudin, Bruno
[J]. JOURNAL OF CRYSTAL GROWTH, 2011, 334 (01) : 177 - 180
[5] Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy
Consonni, V.
Knelangen, M.
Trampert, A.
Geelhaar, L.
Riechert, H.
[J]. APPLIED PHYSICS LETTERS, 2011, 98 (07)
[6] Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy
Calarco, Raffaella
Meijers, Ralph J.
Debnath, Ratan K.
Stoica, Toma
Sutter, Eli
Luth, Hans.
[J]. NANO LETTERS, 2007, 7 (08) : 2248 - 2251
[7] Structural Properties of GaN Nanowires and GaN/AlN Insertions Grown by Molecular Beam Epitaxy
Bougerol, C.
Songmuang, R.
Camacho, D.
Niquet, Y. M.
Daudin, B.
[J]. 16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS, 2010, 209
[8] Electrical characterization of ensemble of GaN nanowires grown by the molecular beam epitaxy technique
Kolkovsky, Vl.
Zytkiewicz, Z. R.
Sobanska, M.
Klosek, K.
[J]. APPLIED PHYSICS LETTERS, 2013, 103 (09)
[9] GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy
Nakagawa, Shinta
Tabata, Takuya
Honda, Yoshio
Yamaguchi, Masahito
Amano, Hiroshi
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
[10] Study of electrical properties of single GaN nanowires grown by molecular beam epitaxy
Mozharov, A. M.
Komissarenko, F. E.
Vasiliev, A. A.
Bolshakov, A. D.
Moiseev, E. I.
Mukhin, M. S.
Cirlin, G. E.
Mukhin, I. S.
[J]. 3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016), 2016, 741

← 1 2 3 4 5 →