Semiconductor line source for low-coherence interferometry

被引：4
|
作者：
Zvyagin, AV [1 ]
Garcia-Webb, MG [1 ]
Sampson, DD [1 ]
机构：
[1] Univ Western Australia, Dept Elect & Elect Engn, Opt & Biomed Engn Lab, Nedlands, WA, Australia
来源：
APPLIED OPTICS | 2001年 / 40卷 / 06期
关键词：
D O I：
10.1364/AO.40.000913
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The suitability for low-coherence interferometry of a high-power, semiconductor laser line source operated at a forward bias current below threshold is demonstrated. Measurements of the important characteristics of the source are presented. For example, the source produces an output power of 1.3 mW and a spatially uniform coherence length of 16 mum at a bias current of 86% of threshold (250 mA) at 20 degreesC. The usefulness of the source is verified by measurement of the Line profile of a contact lens. (C) 2001 Optical Society of America. OCIS codes: 140.2010, 120.3180, 110.1650, 120.6650.
引用
收藏
页码：913 / 915
页数：3
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