Charge-based analytical current model for asymmetric Double-Gate MOSFETs

被引：0
|
作者：
Park, JS [1 ]
Lee, S [1 ]
Jhee, Y [1 ]
Shin, H [1 ]
机构：
[1] Ewha Womans Univ, Dept Informat Elect Engn, Seoul 120750, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2005年 / 47卷
关键词：
current model; asymmetric; Double-gate MOSFETs; inversion layer; semiconductor device modeling;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A charge-based analytical current model for an asymmetric Double-Gate (DG) MOSFET is presented. This analytical model is based on the inversion charge instead of the surface potential, so that the volume-inversion characteristics of the thin-body DG MOSFET can be accurately considered. By comparing the model with the device simulation results, model accuracy is verified for the entire operating range, including the linear, saturation, and subthreshold regions.
引用
收藏
页码：S392 / S396
页数：5
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