Charge-based analytical current model for asymmetric Double-Gate MOSFETs

被引：0
|
作者：
Park, JS [1 ]
Lee, S [1 ]
Jhee, Y [1 ]
Shin, H [1 ]
机构：
[1] Ewha Womans Univ, Dept Informat Elect Engn, Seoul 120750, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2005年 / 47卷
关键词：
current model; asymmetric; Double-gate MOSFETs; inversion layer; semiconductor device modeling;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A charge-based analytical current model for an asymmetric Double-Gate (DG) MOSFET is presented. This analytical model is based on the inversion charge instead of the surface potential, so that the volume-inversion characteristics of the thin-body DG MOSFET can be accurately considered. By comparing the model with the device simulation results, model accuracy is verified for the entire operating range, including the linear, saturation, and subthreshold regions.
引用
收藏
页码：S392 / S396
页数：5
相关论文
共 50 条
  • [21] Analytic and explicit current model of undoped double-gate MOSFETs
    Zhu, Z.
    Zhou, X.
    Rustagi, S. C.
    See, G. H.
    Lin, S.
    Zhu, G.
    Wei, C.
    Zhang, J.
    [J]. ELECTRONICS LETTERS, 2007, 43 (25) : 1464 - 1466
  • [22] An Analytical 2D Current Model of Double-Gate Schottky-Barrier MOSFETs
    Zhao, Yu Ning
    Du, Gang
    Kang, Jin Feng
    Liu, Xiao Yan
    Han, Ruqi
    [J]. SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2008, : 133 - 136
  • [23] Analytical Drain Current Model using Temperature dependence model in nanoscale Double-Gate (DG) MOSFETs
    Cheralathan, M.
    Sampedro, C.
    Gamiz, F.
    Iniguez, B.
    [J]. 2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS), 2013, : 142 - 145
  • [24] Charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors
    Cerdeira, A.
    Estrada, M.
    Iniguez, B.
    Trevisoli, R. D.
    Doria, R. T.
    de Souza, M.
    Pavanello, M. A.
    [J]. SOLID-STATE ELECTRONICS, 2013, 85 : 59 - 63
  • [25] A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution
    Lu, Bin
    Lu, Hongliang
    Zhang, Yuming
    Zhang, Yimen
    Cui, Xiaoran
    Lv, Zhijun
    Yang, Shizheng
    Liu, Chen
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (01) : 299 - 307
  • [26] A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs
    Chen, Q
    Agrawal, B
    Meindl, JD
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (06) : 1086 - 1090
  • [27] Analytical threshold voltage model for double-gate MOSFETs with localized charges
    Kang, Hongki
    Han, Jin-Woo
    Choi, Yang-Kyu
    [J]. IEEE ELECTRON DEVICE LETTERS, 2008, 29 (08) : 927 - 930
  • [28] A non-charge-sheet based analytical model of undoped symmetric double-gate MOSFETs using SPP approach
    Jin, H
    Xi, XM
    Chan, MS
    Lin, CH
    Niknejad, A
    Hu, CM
    [J]. ISQED 2004: 5TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, PROCEEDINGS, 2004, : 45 - 50
  • [29] Charge-based model enhancement for undoped surrounding-gate MOSFETs
    Zhang, L.
    He, J.
    [J]. ELECTRONICS LETTERS, 2009, 45 (11) : 569 - U58
  • [30] Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors
    Sallese, Jean-Michel
    Chevillon, Nicolas
    Lallement, Christophe
    Iniguez, Benjamin
    Pregaldiny, Fabien
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (08) : 2628 - 2637
12345