Effect of pressure on the properties of a silicon-glass interface

被引：2

作者：

Vlasov, SI ^{[1
]}

Ergasheva, MA ^{[1
]}

Adylov, TP ^{[1
]}

机构：

[1] Natl Univ Uzbekistan, Tashkent, Uzbekistan

来源：

TECHNICAL PHYSICS LETTERS | 2005年 / 31卷 / 05期

关键词：

Silicon; Surface State; Hydrostatic Pressure; Energy Distribution; Borosilicate Glass;

D O I：

10.1134/1.1931794

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of hydrostatic pressure on the energy distribution of surface states localized at the boundary between silicon (Si) and a lead borosilicate glass (PbO-SiO2-B2O3-Al2O3-Ta2O5) has been studied. At a pressure of 8 kbar, donor centers are formed in a layer of glass adjacent to the silicon-glass interface, which are capable of participating in electron exchange with the semiconductor. (C) 2005 Pleiades Publishing, Inc.

引用

页码：444 / 445

页数：2

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