A test structure for characterization of the interface energy of anodically bonded silicon-glass wafers

被引：0
|
作者：
R. Knechtel
M. Knaup
J. Bagdahn
机构：
[1] X-FAB Semiconductor Foundries AG Erfurt,
[2] Fraunhofer IWM Halle,undefined
来源：
Microsystem Technologies | 2006年 / 12卷
关键词：
Surface Energy; Interface Energy; Test Structure; Bonding Process; Bonding Temperature;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this paper a test structure is introduced, which allows the evaluation of the quality of an anodic bond interface in terms of surface energy. It is based on the creation of small non-bonded areas in the vicinity of small steps in the bond interface. Using finite element analysis simulations it was possible to calculate the surface energy of the monitored bonding processes. The test structure was used to investigate the influence of anodic bonding parameters (temperature and voltage) on the surface energy.
引用
收藏
页码：462 / 467
页数：5
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