Effect of pressure on the properties of a silicon-glass interface

被引：2
|
作者：
Vlasov, SI [1 ]
Ergasheva, MA [1 ]
Adylov, TP [1 ]
机构：
[1] Natl Univ Uzbekistan, Tashkent, Uzbekistan
来源：
TECHNICAL PHYSICS LETTERS | 2005年 / 31卷 / 05期
关键词：
Silicon; Surface State; Hydrostatic Pressure; Energy Distribution; Borosilicate Glass;
D O I：
10.1134/1.1931794
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of hydrostatic pressure on the energy distribution of surface states localized at the boundary between silicon (Si) and a lead borosilicate glass (PbO-SiO2-B2O3-Al2O3-Ta2O5) has been studied. At a pressure of 8 kbar, donor centers are formed in a layer of glass adjacent to the silicon-glass interface, which are capable of participating in electron exchange with the semiconductor. (C) 2005 Pleiades Publishing, Inc.
引用
收藏
页码：444 / 445
页数：2
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