A High PSRR Bandgap Voltage Reference with Virtually Diode-Connected MOS Transistors

被引：1

作者：

Souri, Kianoush ^{[1
]}

Shamsi, Hossein ^{[1
]}

Kazemi, Mehrshad ^{[2
]}

Souri, Kamran ^{[3
]}

机构：

[1] KN Toosi Univ Technol, Elect Fac, Tehran, Iran

[2] Islamic Azad Univ, Qazvin Branch, Tehran, Iran

[3] Delft Univ Technol, Elect Instrumentat Lab, NL-2600 AA Delft, Netherlands

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2010年 / E93C卷 / 12期

关键词：

bandgap; reference voltage; weak inversion; MOSFET; REFERENCE CIRCUIT;

D O I：

10.1587/transele.E93.C.1708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a voltage reference that utilizes the virtually diode connected MOS transistors biased in the weak inversion region The proposed architecture increases the gain of the feedback loop that consequently reduces the system sensitivity and hence improves the PSRR The circuit is designed and simulated in a standard 0 18 mu m CMOS technology The simulation results in HSPICE indicate the successful operation of the circuit as follows the PSRR at DC frequency is 86 dB and for the temperature range from -55 degrees C to 125 degrees C the variation of the output reference voltage is less than 66 ppm/degrees C

引用

页码：1708 / 1712

页数：5

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