A High PSRR Bandgap Voltage Reference with Virtually Diode-Connected MOS Transistors

被引：1

作者：

Souri, Kianoush ^{[1
]}

Shamsi, Hossein ^{[1
]}

Kazemi, Mehrshad ^{[2
]}

Souri, Kamran ^{[3
]}

机构：

[1] KN Toosi Univ Technol, Elect Fac, Tehran, Iran

[2] Islamic Azad Univ, Qazvin Branch, Tehran, Iran

[3] Delft Univ Technol, Elect Instrumentat Lab, NL-2600 AA Delft, Netherlands

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2010年 / E93C卷 / 12期

关键词：

bandgap; reference voltage; weak inversion; MOSFET; REFERENCE CIRCUIT;

D O I：

10.1587/transele.E93.C.1708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a voltage reference that utilizes the virtually diode connected MOS transistors biased in the weak inversion region The proposed architecture increases the gain of the feedback loop that consequently reduces the system sensitivity and hence improves the PSRR The circuit is designed and simulated in a standard 0 18 mu m CMOS technology The simulation results in HSPICE indicate the successful operation of the circuit as follows the PSRR at DC frequency is 86 dB and for the temperature range from -55 degrees C to 125 degrees C the variation of the output reference voltage is less than 66 ppm/degrees C

引用

页码：1708 / 1712

页数：5

共 50 条

[21] Novel high PSRR high-order temperature-compensated subthreshold MOS bandgap reference
Zhou Qianneng
Zhu Ling
Li Hongjuan
Lin Jinzhao
Wang Liangcai
Luo Wei
The Journal of China Universities of Posts and Telecommunications, 2017, (06) : 74 - 82
[22] Novel high PSRR high-order temperature-compensated subthreshold MOS bandgap reference
Qianneng Z.
Ling Z.
Hongjuan L.
Jinzhao L.
Liangcai W.
Wei L.
Qianneng, Zhou (zhouqn@cqupt.edu.cn), 1600, Beijing University of Posts and Telecommunications (24): : 74 - 82
[23] High PSRR Bandgap Reference Used in Boost Circuit
Li, Yi
Duan, Baoxing
Wang, Yong
Yang, Yintang
ADVANCES IN MATERIALS, MACHINERY, ELECTRONICS I, 2017, 1820
[24] A High-PSRR CMOS Bandgap Reference Circuit
Chang Liping
An Kang
Liu Yao
Liang Bin
Li Jinwen
COMPUTER ENGINEERING AND TECHNOLOGY, 2016, 592 : 94 - 102
[25] Optimization of Bandgap Reference with High PSRR on Deep Submicron
Shi Jun
2021 IEEE INTERNATIONAL CONFERENCE ON CONSUMER ELECTRONICS AND COMPUTER ENGINEERING (ICCECE), 2021, : 148 - 153
[26] Novel high-PSRR high-order curvature-compensated bandgap voltage reference
Zhou Qianneng
Yan Kai
Lin Jinzhao
Pang Yu
Li Guoquan
Luo Wei
The Journal of China Universities of Posts and Telecommunications, 2016, (02) : 66 - 72
[27] High-PSRR high-order curvature-compensated CMOS bandgap voltage reference
Chongqing Key Laboratory of Photoelectronic Information Sensing and Transmitting Technology, Chongqing University of Posts and Telecommunications, Chongqing, China
不详
不详
Sichuan, China
J. Harbin Inst. Technol., 5 (116-124): : 116 - 124
[28] High-PSRR High-Order Curvature-Compensated CMOS Bandgap Voltage Reference
Qianneng Zhou
Yunsong Li
Jinzhao Lin
Hongjuan Li
Yu Pang
Wei Luo
Journal of Harbin Institute of Technology(New series), 2015, (05) : 116 - 124
[29] Novel high-PSRR high-order curvature-compensated bandgap voltage reference
Zhou Qianneng
Yan Kai
Lin Jinzhao
Pang Yu
Li Guoquan
Luo Wei
The Journal of China Universities of Posts and Telecommunications, 2016, 23 (02) : 66 - 72+96
[30] A High-PSRR Bandgap Voltage Reference with Temperature Curvature Compensation Used for Pipeline ADC
Zhang Shuo
Wang Zongmin
Zhou Liang
Feng Wenxiao
Ding Yang
2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2013,

← 1 2 3 4 5 →