High PSRR Bandgap Reference Used in Boost Circuit

被引：0
|
作者：
Li, Yi [1 ]
Duan, Baoxing [1 ]
Wang, Yong [1 ]
Yang, Yintang [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China
来源：
ADVANCES IN MATERIALS, MACHINERY, ELECTRONICS I | 2017年 / 1820卷
关键词：
D O I：
10.1063/1.4977349
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Based on pre-regulated voltage structure, a voltage bandgap reference with high power supply rejection ratio (PSRR) is presented in this paper. A pre-regulated voltage structure is used in the circuit to achieve isolating the supply voltage of the bandgap core circuit from VDD to reach a high PSRR. The circuit was designed and simulated in 0.35um BCD technology. The results show the output voltage variation versus temperature (-50 C-omicron - 100 C-omicron) is 8.8 ppm/ C-omicron, bandgap reference voltage is 1.236V, current consumption is 30.3 mu A. Noise is 53.54 mu V/Hz-1/2 at 1Hz. PSRR is - 91dB at low frequency, -90.3dB at 1 kHz and -30.3dB at 1MHz. thus, the circuit maintains a good performance in PSRR through a broad frequency.
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页数：9
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