A high precision high PSRR bandgap reference with thermal hysteresis protection

被引:0
|
作者
Yang Yintang [1 ]
Li Yani [1 ]
Zhu Zhangming [1 ]
机构
[1] Xidian Univ, Inst Microelect, Minist Educ, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
bandgap voltage reference; curvature-compensated; power supply rejection ratio; over-temperature protection; BCD process;
D O I
10.1088/1674-4926/31/9/095010
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
To meet the accuracy requirement for the bandgap voltage reference by the increasing data conversion precision of integrated circuits, a high-order curvature-compensated bandgap voltage reference is presented employing the characteristic of bipolar transistor current gain exponentially changing with temperature variations. In addition, an over-temperature protection circuit with a thermal hysteresis function to prevent thermal oscillation is proposed. Based on the CSMC 0.5 mu m 20 V BCD process, the designed circuit is implemented; the active die area is 0.17 x 0.20 mm(2). Simulation and testing results show that the temperature coefficient is 13.7 ppm/K with temperature ranging from -40 to 150 C-circle, the power supply rejection ratio is -98.2 dB, the line regulation is 0.3 mV/V, and the power consumption is only 0.38 mW. The proposed bandgap voltage reference has good characteristics such as small area, low power consumption, good temperature stability, high power supply rejection ratio, as well as low line regulation. This circuit can effectively prevent thermal oscillation and is suitable for on-chip voltage reference in high precision analog, digital and mixed systems.
引用
收藏
页数:5
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