STRUCTURE OF Ge2Sb2Te5 THIN FILMS NEAR THE INFLECTION POINT OF THE RESISTIVITY TEMPERATURE DEPENDENCE

被引：0
|
作者：
Zaytseva, Y. [1 ]
Lazarenko, P. [1 ]
Vorobyov, Yu [2 ]
Yakubov, A. [1 ]
Borgardt, N. [1 ]
Kozyukhin, S. [3 ,4 ]
Sherchenkov, A. [1 ]
机构：
[1] Natl Res Univ Elect Technol, Zelenograd 124498, Russia
[2] Ryazan State Radio Engn Univ, Ryazan 390005, Russia
[3] RAS, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia
[4] Natl Res Tomsk State Univ, Tomsk 634050, Russia
来源：
CHALCOGENIDE LETTERS | 2020年 / 17卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
Ge2Sb2Te5; Phase change material; Thin film; Crystallization; Resistivity; Inflection point; Transmission electron microscopy; PHASE-CHANGE MATERIALS; CRYSTALLIZATION; STABILITY;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated Ge2Sb2Te5 thin films annealed at the temperatures specific to the crystallization process using transmission electron microscopy. The annealing temperatures typical for the inflection point (168 degrees C) of the temperature dependence of resistivity and at the end of the crystallization process (183 degrees C) were chosen for the TEM studies. These studies clearly showed that the inflection point on the temperature dependence of resistivity is identified with a two-stage character of Ge2Sb2Te5 thin films crystallization.
引用
收藏
页码：41 / 47
页数：7
相关论文
共 50 条
  • [41] Thermoelectric properties of nitrogen-doped Ge2Sb2Te5 thin films
    Qian, Dongjie
    Miao, Jiale
    Yuan, Pengyue
    Yuan, Yanyan
    Song, Dongdong
    Lan, Rui
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2022, 33 (16) : 12750 - 12759
  • [42] INVESTIGATION OF RESONANT BONDING IN AL MODIFIED Ge2Sb2Te5 THIN FILMS
    Sandhu, S.
    Singh, D.
    Kumar, S.
    Thangaraj, R.
    CHALCOGENIDE LETTERS, 2015, 12 (12): : 705 - 711
  • [43] Influence of the adjacent layers on the crystallization kinetics of Ge2Sb2Te5 thin films
    Alexey Yakubov
    Alexey Sherchenkov
    Alexey Babich
    Petr Lazarenko
    Irina Sagunova
    Elena Kirilenko
    Journal of Thermal Analysis and Calorimetry, 2020, 142 : 1019 - 1029
  • [44] The microstructure and texture of Ge2Sb2Te5 thin films for phase change memory
    QixunYin
    Chen, Leng
    2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2017,
  • [45] Characteristics of Ge2Sb2Te5 thin films deposited by DC magnetron sputtering
    Song, YS
    Chung, CW
    JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, 2003, 9 (05) : 551 - 555
  • [46] Optical nonlinear absorption characteristics of crystalline Ge2Sb2Te5 thin films
    Liu, Shuang
    Wei, Jingsong
    Gan, Fuxi
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (03)
  • [47] Hot Wire Chemical Vapor Deposition of Ge2Sb2Te5 Thin Films
    Reso, D.
    Silinskas, M.
    Kalkofen, B.
    Lisker, M.
    Burte, E. P.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (03) : D187 - D190
  • [48] Correlation between microstructure and optical properties of Ge2Sb2Te5 thin films
    Kim, JH
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) : 6770 - 6772
  • [49] Isothermal and CW laser crystallization of amorphous Ge2Sb2Te5 thin films
    Kozyukhin, S.
    Vorobyov, Yu.
    Lazarenko, P.
    Presniakov, M.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2018, 480 : 51 - 56
  • [50] Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films
    De Bastiani, R.
    Piro, A. M.
    Crupi, I.
    Grimaldi, M. G.
    Rimini, E.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (10): : 2511 - 2514
12345