STRUCTURE OF Ge2Sb2Te5 THIN FILMS NEAR THE INFLECTION POINT OF THE RESISTIVITY TEMPERATURE DEPENDENCE

被引：0

作者：

Zaytseva, Y. ^{[1
]}

Lazarenko, P. ^{[1
]}

Vorobyov, Yu ^{[2
]}

Yakubov, A. ^{[1
]}

Borgardt, N. ^{[1
]}

Kozyukhin, S. ^{[3
,4
]}

Sherchenkov, A. ^{[1
]}

机构：

[1] Natl Res Univ Elect Technol, Zelenograd 124498, Russia

[2] Ryazan State Radio Engn Univ, Ryazan 390005, Russia

[3] RAS, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia

[4] Natl Res Tomsk State Univ, Tomsk 634050, Russia

来源：

CHALCOGENIDE LETTERS | 2020年 / 17卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

Ge2Sb2Te5; Phase change material; Thin film; Crystallization; Resistivity; Inflection point; Transmission electron microscopy; PHASE-CHANGE MATERIALS; CRYSTALLIZATION; STABILITY;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated Ge2Sb2Te5 thin films annealed at the temperatures specific to the crystallization process using transmission electron microscopy. The annealing temperatures typical for the inflection point (168 degrees C) of the temperature dependence of resistivity and at the end of the crystallization process (183 degrees C) were chosen for the TEM studies. These studies clearly showed that the inflection point on the temperature dependence of resistivity is identified with a two-stage character of Ge2Sb2Te5 thin films crystallization.

引用

页码：41 / 47

页数：7

共 50 条

[21] Investigation of the reactive ion etching of Ge2Sb2Te5 thin films
Shulyatev, A.
Sherchenkov, A.
Gromov, D.
Lazarenko, P.
Sysa, A.
Kozmin, A.
INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2016, 2016, 10224
[22] Effects of microstructure on optical properties of Ge2Sb2Te5 thin films
Kim, JH
Kim, MR
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (4B): : 2116 - 2117
[23] Effect of Ag mixing in thermoelectric Ge2Sb2Te5 thin films
Vora-ud, Athorn
Horprathum, Mati
Kumar, Manish
Muthitamongkol, Pennapa
Chananonnawathorn, Chanunthorn
Saekow, Bunpot
Nualkham, Intira
Thaowonkaew, Somporn
Thanachayanont, Chanchana
Seetawan, Tosawat
MATERIALS LETTERS, 2019, 234 : 229 - 232
[24] Influence of bismuth on the optical properties of Ge2Sb2Te5 thin films
Nguyen, H. Ph
Kozyukhin, S. A.
Pevtsov, A. B.
SEMICONDUCTORS, 2014, 48 (05) : 577 - 583
[25] Ultrafast coherent phonon dynamics in Ge2Sb2Te5 thin films
Dong Hak Kim
J. W. Park
Hosun Lee
D. Lim
Journal of the Korean Physical Society, 2013, 62 : 743 - 748
[26] Influence of bismuth on the optical properties of Ge2Sb2Te5 thin films
H. Ph. Nguyen
S. A. Kozyukhin
A. B. Pevtsov
Semiconductors, 2014, 48 : 577 - 583
[27] Ultrafast coherent phonon dynamics in Ge2Sb2Te5 thin films
Kim, Dong Hak
Park, J. W.
Lee, Hosun
Lim, D.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 62 (05) : 743 - 748
[28] Effect of amorphization on the structural stability and reversibility of Ge2Sb2Te5 and oxygen incorporated Ge2Sb2Te5 films
Park, Seung Jong
Jang, Moon Hyung
Park, Sung Jin
Ahn, Min
Park, Dam Bi
Ko, Dae-Hong
Cho, Mann-Ho
JOURNAL OF MATERIALS CHEMISTRY, 2012, 22 (32) : 16527 - 16533
[29] Effect of CMP on the Te Segregation in Ge2Sb2Te5 Films
Shin, Dong-Hee
Lee, Dong-Hyun
Jeong, Min-Gun
Park, Hyung-Soon
Lim, Dae-Soon
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2012, 159 (03) : H349 - H352
[30] Effects of mass, energy and temperature on amorphization in ion implanted Ge2Sb2Te5 thin films
De Bastiani, Riccardo
Piro, Alberto Maria
Lombardo, Salvatore
Grimaldi, Maria Grazia
Rimini, Emanuele
MATERIALS AND PROCESSES FOR NONVOLATILE MEMORIES II, 2007, 997 : 305 - +

← 1 2 3 4 5 →