STRUCTURE OF Ge2Sb2Te5 THIN FILMS NEAR THE INFLECTION POINT OF THE RESISTIVITY TEMPERATURE DEPENDENCE

被引：0

作者：

Zaytseva, Y. ^{[1
]}

Lazarenko, P. ^{[1
]}

Vorobyov, Yu ^{[2
]}

Yakubov, A. ^{[1
]}

Borgardt, N. ^{[1
]}

Kozyukhin, S. ^{[3
,4
]}

Sherchenkov, A. ^{[1
]}

机构：

[1] Natl Res Univ Elect Technol, Zelenograd 124498, Russia

[2] Ryazan State Radio Engn Univ, Ryazan 390005, Russia

[3] RAS, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia

[4] Natl Res Tomsk State Univ, Tomsk 634050, Russia

来源：

CHALCOGENIDE LETTERS | 2020年 / 17卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

Ge2Sb2Te5; Phase change material; Thin film; Crystallization; Resistivity; Inflection point; Transmission electron microscopy; PHASE-CHANGE MATERIALS; CRYSTALLIZATION; STABILITY;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated Ge2Sb2Te5 thin films annealed at the temperatures specific to the crystallization process using transmission electron microscopy. The annealing temperatures typical for the inflection point (168 degrees C) of the temperature dependence of resistivity and at the end of the crystallization process (183 degrees C) were chosen for the TEM studies. These studies clearly showed that the inflection point on the temperature dependence of resistivity is identified with a two-stage character of Ge2Sb2Te5 thin films crystallization.

引用

页码：41 / 47

页数：7

共 50 条

[31] Thermal conductivity anisotropy and grain structure in Ge2Sb2Te5 films
Lee, Jaeho
Li, Zijian
Reifenberg, John P.
Lee, Sangchul
Sinclair, Robert
Asheghi, Mehdi
Goodson, Kenneth E.
JOURNAL OF APPLIED PHYSICS, 2011, 109 (08)
[32] Enhanced thermoelectric properties of Ge2Sb2Te5 thin films through the control of crystal structure
Kang, So-Hyun
Jella, Venkatraju
Pammi, S. V. N.
Eom, Ji-Ho
Choi, Jin-Seok
Jeong, Jong-Ryul
Yoon, Soon-Gil
CURRENT APPLIED PHYSICS, 2017, 17 (05) : 744 - 750
[33] Influence of Si and N additions on structure and phase stability of Ge2Sb2Te5 thin films
Koelpin, Helmut
Music, Denis
Laptyeva, Galyna
Ghadimi, Reza
Merget, Florian
Richter, Silvia
Mykhaylonka, Ruslan
Mayer, Joachim
Schneider, Jochen M.
JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (43)
[34] Study on the crystallization by an electrical resistance measurement in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 films
Hu, D. Z.
Lu, X. M.
Zhu, J. S.
Yan, F.
JOURNAL OF APPLIED PHYSICS, 2007, 102 (11)
[35] Comparative structural and optical properties of Ge2Sb2Te5, In0.3Ge2Sb2Te5 and Se2Sb2Te6 thin films
Qamhieh, N.
Mahmoud, S. T.
Ghamlouche, H.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2009, 11 (12): : 1995 - 1999
[36] Ge2Sb2Te5 thin film doped with silver
Lie, CT
Kuo, PC
Wu, TH
Chen, PW
ISOM/ODS 2002: INTERNATIONAL SYMPOSIUM ON OPTICAL MEMORY AND OPTICAL DATA STORAGE TOPICAL MEETING, TECHNICAL DIGEST, 2002, : 213 - 215
[37] Ge2Sb2Te5 thin film doped with silver
Lie, Chao-Te
Kuo, Po-Cheng
Hsu, Wei-Chih
Wu, Ting-Hao
Chen, Po-Wei
Chen, Sheng-Chi
1600, Japan Society of Applied Physics (42):
[38] Ge2Sb2Te5 thin film doped with silver
Lie, CT
Kuo, PC
Hsu, WC
Wu, TH
Chen, PW
Chen, SC
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (2B): : 1026 - 1028
[39] Effects of preparation parameters on the optical constants of Ge2Sb2Te5 thin films
Xie, Q
Hou, LS
Ruan, H
Li, JY
Li, J
Gan, FX
FIFTH INTERNATIONAL SYMPOSIUM ON OPTICAL STORAGE (ISOS 2000), 2000, 4085 : 112 - 116
[40] Nucleation, growth, and phase transformation mechanism of Ge2Sb2Te5 thin films
Kim, Eun Tae
Lee, Jeong Yong
Kim, Yong Tae
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (11): : 2542 - 2545

← 1 2 3 4 5 →