Isothermal and CW laser crystallization of amorphous Ge2Sb2Te5 thin films

被引：4
|
作者：
Kozyukhin, S. [1 ,5 ]
Vorobyov, Yu. [2 ]
Lazarenko, P. [3 ]
Presniakov, M. [4 ]
机构：
[1] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Leninsky Pr,31, Moscow 119991, Russia
[2] Ryazan State Radio Engn Univ, Gagarin St,59-1, Ryazan 390005, Russia
[3] Natl Res Univ Elect Technol, Bld 1,Shokin Sq, Moscow, Russia
[4] NRC Kurchatov Inst, 1,Akad Kurchatova Pl, Moscow 123182, Russia
[5] Tomsk State Univ, Dept Chem, 36,Lenin Pr, Tomsk 634050, Russia
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2018年 / 480卷
关键词：
Ge2Sb2Te5 phase change material; Amorphous thin film; Finite system crystallization; Heterogeneous nucleation; PHASE-CHANGE; CRYSTAL NUCLEATION; NONISOTHERMAL CRYSTALLIZATION; KINETICS; GROWTH; GLASS; LIQUIDS; MODEL; TRANSFORMATION; PARAMETERS;
D O I：
10.1016/j.jnoncrysol.2017.07.014
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Transmission electron microscopy results are presented for as-deposited amorphous Ge2Sb2Te5 thin films after theirs isothermal annealing and CW laser illumination. Obtained microphotographs suggested that the crystallization process was driven solely by heterogeneous nucleation on the film boundary. The simplified model of steady-state crystallization process was developed for the case of heterogeneous nucleation mechanism. The values of nucleation rate and growth rate for isothermal and CW laser crystallization are calculated. The calculated values are in reasonable agreement with both our experimental data and with results previously published by the other authors.
引用
收藏
页码：51 / 56
页数：6
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