Wirelike growth of Si on an Au/Si(111) substrate by gas source molecular beam epitaxy

被引：0
|
作者：
Liu, JL [1 ]
Cai, SJ [1 ]
Jin, GL [1 ]
Wang, KL [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 1998年 / 1卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Ultrafine Si nanowires are grown on an Au/Si(111) substrate using gas source molecular beam epitaxy. These Si wires with cross-sectional dimensions between 50 nm and 2 mu m grow mainly with a growth axis parallel to the <111> direction, The growth rate of nanowires is independent of their diameters, i.e.. nanowires with different diameters have the same growth rate. From the dependence of source gas concentration on the growth rate we conclude that this independence is a fundamental one even when gas pressure ranges as high as 1 x 10(-4) Torr. This method provides a possible alternative means for fabricating ultrafine silicon quantum wires. (C) 1998 The Electrochemical Society. S1099-0062(98)03-088-7. All rights reserved.
引用
收藏
页码：188 / 190
页数：3
相关论文
共 50 条
  • [31] The growth of AlN thin films on Si(111) substrate by plasma-assisted molecular beam epitaxy
    Chuah, L. S.
    Hassan, Z.
    Abu Hassan, H.
    [J]. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2008, 2 (03): : 137 - 139
  • [32] The growth and optical properties of GaN nanorods grown on Si (111) substrate by molecular-beam epitaxy
    Park, Young S.
    Lee, J. C.
    Kang, T. W.
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 (05) : 2010 - 2014
  • [33] High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
    Nikishin, SA
    Faleev, NN
    Antipov, VG
    Francoeur, S
    de Peralta, LG
    Seryogin, GA
    Holtz, M
    Prokofyeva, TI
    Chu, SNG
    Zubrilov, AS
    Elyukhin, VA
    Nikitina, IP
    Nikolaev, A
    Melnik, Y
    Dmitriev, V
    Temkin, H
    [J]. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5
  • [34] INSTABILITY IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GROWTH OF SI/SI(111)
    YANG, HN
    WANG, GC
    LU, TM
    [J]. PHYSICAL REVIEW LETTERS, 1994, 73 (17) : 2348 - 2351
  • [35] Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy
    Sanchez-Garcia, MA
    Calleja, E
    Sanchez, FJ
    Calle, F
    Monroy, E
    Basak, D
    Munoz, E
    Villar, C
    Sanz-Hervas, A
    Aguilar, M
    Serrano, JJ
    Blanco, JM
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) : 276 - 281
  • [36] Selective area growth of GaN nanowires on Si(111) substrate with Ti masks by molecular beam epitaxy
    Li, Gang
    Yao, Yangyi
    Dagenais, Mario
    [J]. JOURNAL OF CRYSTAL GROWTH, 2019, 524
  • [37] Growth of topological crystalline insulator SnTe thin films on Si(111). substrate by molecular beam epitaxy
    Yan, Chen-Hui
    Guo, Hua
    Wen, Jing
    Zhang, Zhi-Dong
    Wang, Li-Li
    He, Ke
    Ma, Xu-Cun
    Ji, Shuai-Hua
    Chen, Xi
    Xue, Qi-Kun
    [J]. SURFACE SCIENCE, 2014, 621 : 104 - 108
  • [38] GAS-SOURCE MOLECULAR-BEAM EPITAXY OF FESI2/SI(111) HETEROSTRUCTURES
    SCHAFER, HC
    ROSEN, B
    MORITZ, H
    RIZZI, A
    LENGELER, B
    LUTH, H
    GERTHSEN, D
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (18) : 2271 - 2273
  • [39] Growth and optical properties of epitaxial GaN films on Si(111) using single gas-source molecular beam epitaxy
    Torrison, L
    Tolle, J
    Tsong, IST
    Kouvetakis, J
    [J]. THIN SOLID FILMS, 2003, 434 (1-2) : 106 - 111
  • [40] Modeling growth in Si gas-source molecular beam epitaxy using Si2H6
    Hirose, F
    [J]. JOURNAL OF CRYSTAL GROWTH, 1997, 179 (1-2) : 108 - 114
12345