Selective area growth of GaN nanowires on Si(111) substrate with Ti masks by molecular beam epitaxy

被引：6

作者：

Li, Gang ^{[1
]}

Yao, Yangyi ^{[1
]}

Dagenais, Mario ^{[1
]}

机构：

[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2019年 / 524卷

基金：

美国国家科学基金会;

关键词：

GaN nanowires; Selective area growth; Molecular beam epitaxy; InGaN quantum dot; LIGHT-EMITTING-DIODES; NANOCOLUMNS; BLUE;

D O I：

10.1016/j.jcrysgro.2019.125181

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present results on the selective area growth (SAG) of Gallium Nitride (GaN) nanowires on Si substrate without any buffer layer by radio frequency plasma-assisted molecular beam epitaxy. Full selectivity was achieved with a thin Ti metal film used as a mask. The mask was fabricated with a lift-off method to avoid damage to the mask or Si substrate. The growth on the Ti film was totally suppressed at a low substrate temperature of 840 degrees C which is by far the lowest critical temperature for SAG. An InGaN thin layer was embedded in the GaN nanowires to realize a site controllable single photon source. Transmission electron microscopy (TEM) indicates single crystalline quality of defect-free GaN nanowires and the embedded InGaN quantum dot structure.

引用

页数：5

共 50 条

[1] Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)
Debnath, R. K.
Meijers, R.
Richter, T.
Stoica, T.
Calarco, R.
Lueth, H.
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (12)
[2] Selective area growth of GaN on Si(111) by chemical beam epitaxy
Kim, E
Tempez, A
Medelci, N
Berishev, I
Bensaoula, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04): : 1130 - 1134
[3] Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy
Calarco, Raffaella
Meijers, Ralph J.
Debnath, Ratan K.
Stoica, Toma
Sutter, Eli
Luth, Hans.
[J]. NANO LETTERS, 2007, 7 (08) : 2248 - 2251
[4] Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy
Kruse, J. E.
Lymperakis, L.
Eftychis, S.
Adikimenakis, A.
Doundoulakis, G.
Tsagaraki, K.
Androulidaki, M.
Olziersky, A.
Dimitrakis, P.
Ioannou-Sougleridis, V.
Normand, P.
Koukoula, T.
Kehagias, Th.
Komninou, Ph.
Konstantinidis, G.
Georgakilas, A.
[J]. JOURNAL OF APPLIED PHYSICS, 2016, 119 (22)
[5] Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy
Zhong, Aihua
Hane, Kazuhiro
[J]. NANOSCALE RESEARCH LETTERS, 2012, 7 : 1 - 7
[6] Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy
Aihua Zhong
Kazuhiro Hane
[J]. Nanoscale Research Letters, 7
[7] Growth of GaN layers on SiC/Si(111) substrate by molecular beam epitaxy
Ristic, J
Sánchez-García, MA
Calleja, E
Pérez-Rodríguez, A
Serre, C
Romano-Rodríguez, A
Morante, JR
Koegler, VR
Skorupa, W
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 93 (1-3): : 172 - 176
[8] Selective-Area Growth of GaN Nanowires on Patterned SiOx/Si Substrates by Molecular Beam Epitaxy
Gridchin, V. O.
Kotlyar, K. P.
Reznik, R. R.
Dvoretskaya, L. N.
Parfen'eva, A. V.
Mukhin, I. S.
Cirlin, G. E.
[J]. TECHNICAL PHYSICS LETTERS, 2020, 46 (11) : 1080 - 1083
[9] Selective-Area Growth of GaN Nanowires on Patterned SiOx/Si Substrates by Molecular Beam Epitaxy
V. O. Gridchin
K. P. Kotlyar
R. R. Reznik
L. N. Dvoretskaya
A. V. Parfen’eva
I. S. Mukhin
G. E. Cirlin
[J]. Technical Physics Letters, 2020, 46 : 1080 - 1083
[10] Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate
Borysiuk, J.
Zytkiewicz, Z. R.
Sobanska, M.
Wierzbicka, A.
Klosek, K.
Korona, K. P.
Perkowska, P. S.
Reszka, A.
[J]. NANOTECHNOLOGY, 2014, 25 (13)

← 1 2 3 4 5 →