Growth of topological crystalline insulator SnTe thin films on Si(111). substrate by molecular beam epitaxy

被引：29

作者：

Yan, Chen-Hui ^{[1
,2
]}

Guo, Hua ^{[1
]}

Wen, Jing ^{[1
]}

Zhang, Zhi-Dong ^{[2
]}

Wang, Li-Li ^{[3
]}

He, Ke ^{[3
]}

Ma, Xu-Cun ^{[3
]}

Ji, Shuai-Hua ^{[1
]}

Chen, Xi ^{[1
]}

Xue, Qi-Kun ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China

[2] Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China

[3] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

来源：

SURFACE SCIENCE | 2014年 / 621卷

关键词：

Topological crystalline insulator; Electronic structure; Molecular beam epitaxy; Scanning tunneling microscopy; Angle-resolved photoemission spectroscopy; EXPERIMENTAL REALIZATION; BI2SE3;

D O I：

10.1016/j.susc.2013.11.004

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present the growth of atomically flat topological crystalline insulator (TCI) SnTe films on Si(111) substrate by molecular beam epitaxy (MBE). The growth condition for achieving high quality SnTe film was established by a combination of reflection high energy electron diffraction (RI-TEED) and scanning tunneling microscopy (STM) studies. In-situ angle resolved photoemission spectroscopy (ARPES) measurements elucidate the topological nature of the SnTe films. The electronic structure of SnTe films can be tuned by film thickness and Pb doping. The success in growing high quality SnTe thin films with tunable electronic structure is crucial for potential device applications. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：104 / 108

页数：5

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