Modeling growth in Si gas-source molecular beam epitaxy using Si2H6

被引：18
|
作者：
Hirose, F
机构：
[1] Advanced Technology Research Center, Mitsubishi Heavy Industries Ltd., Yokohama 236, 1-8-1 Sachiura, Kanazawa-ku
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 179卷 / 1-2期
关键词：
Si; Si2H6; growth; gas-source MBE; adsorption; desorption;
D O I：
10.1016/S0022-0248(97)00092-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Substrate temperature dependencies of growth rate and surface hydrogen coverage for Si GSMBE using Si2H6 have been obtained experimentally. Validity of a growth model has been confirmed by comparing the model prediction with the experimental data. The Si growth can be described as a combination of the Si2H6 adsorption and the surface-hydrogen desorption. A Si2H6 molecule adsorbs on a Si(1 0 0) surface consuming two available dangling bonds, while the desorption of surface hydrogen is characterized as a first-order reaction.
引用
收藏
页码：108 / 114
页数：7
相关论文
共 50 条
  • [1] Modeling growth in SiGe gas-source molecular beam epitaxy using Si2H6 and GeH4
    Hirose, F
    Sakamoto, H
    [J]. MICROELECTRONIC ENGINEERING, 1998, 43-4 : 635 - 640
  • [2] LIMITING CONDITIONS OF SI SELECTIVE EPITAXIAL-GROWTH IN SI2H6 GAS-SOURCE MOLECULAR-BEAM EPITAXY
    AKETAGAWA, K
    TATSUMI, T
    SAKAI, J
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (14) : 1735 - 1736
  • [3] SI DANGLING BONDS ON SI(100) SURFACE DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH SI2H6
    TAKAKUWA, Y
    YAMAGUCHI, T
    MIYAMOTO, N
    [J]. JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 328 - 332
  • [4] SI2H6 DOPING OF INP IN GAS-SOURCE MOLECULAR-BEAM EPITAXY USING TRIETHYLINDIUM AND PHOSPHINE
    ANDO, H
    OKAMOTO, N
    SANDHU, A
    FUJII, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A): : L1696 - L1698
  • [5] Effect of Ge on the P doping in Si gas-source molecular beam epitaxy using Si2H6 and PH3
    Hirose, F
    [J]. THIN SOLID FILMS, 2000, 369 (1-2) : 230 - 232
  • [6] GAS SOURCE MOLECULAR-BEAM EPITAXY OF SI AND SIGE USING SI2H6 AND GEH4
    YAMADA, A
    TANDA, M
    KATO, F
    KONAGAI, M
    TAKAHASHI, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (02) : 1008 - 1012
  • [7] Desorption rate of surface hydrogen in SiGe gas-source molecular beam epitaxy using Si2H6 and GeH4
    Hirose, F
    Sakamoto, H
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (05): : 2974 - 2978
  • [8] SI(001)2X1 GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 - GROWTH-KINETICS AND BORON DOPING
    BRAMBLETT, TR
    LU, Q
    HASAN, MA
    JO, SK
    GREENE, JE
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) : 1884 - 1888
  • [9] SI DOPING OF ALGAAS USING SI2H6 GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING TRIMETHYLAMINE ALANE, TRIETHYLGALLIUM, AND ASH3
    FUJII, T
    OKAMOTO, N
    SANDHU, A
    ANDO, H
    KATAOKA, Y
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 946 - 948
  • [10] Growth studies of GaP on Si by gas-source molecular beam epitaxy
    Bi, WG
    Mei, XB
    Tu, CW
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 164 (1-4) : 256 - 262
12345