A 1-V Low-Noise Readout Front-End for Biomedical Applications in 0.18-μm CMOS

被引:0
|
作者
Chou, Chien-Jung [1 ]
Kuo, Bing-Jye [1 ]
Chen, Li-Guang [1 ]
Hsiao, Po-Yun [1 ]
Lin, Tsung-Hsien [1 ]
机构
[1] Natl Taiwan Univ, Grad Inst Elect Engn, Dept Elect Engn, Taipei 10764, Taiwan
关键词
INSTRUMENTATION AMPLIFIER; OFFSET;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents a 1-V and low-noise readout front-end for biomedical applications. The key to this low-voltage and low-power operation is the current-mode instrumentation amplifier (CMIA). To reject the DC offset, an active-RC integrator with the subthreshold-biased PMOS as high resistance is included in the CMIA and forms the offset cancellation loop. The nested-chopper technique is applied to reduce the flicker noise and improve the common-mode rejection ratio (CMRR). A proposed third-order G(m)-C low-pass filter (LPF) is incorporated to remove the modulated noise by the choppers. Furthermore, a digitally programmable gain stage is incorporated to provide adjustable gain range for the readout front-end. The overall readout front-end has a bandwidth of 140 Hz and achieves 125-dB CMRR, 90-dB power-supply rejection ratio (PSRR), and 6-nV/rtHz input-referred noise density. The readout front-end is fabricated in a 0.18-mu m CMOS process. Total power consumption is 182 mu W from a 1-V supply.
引用
收藏
页码:295 / 298
页数:4
相关论文
共 50 条
  • [21] Extremely Wideband 0.18-μm CMOS Compact Distributed Low-Noise Amplifier
    Chirala, M.
    Guan, X.
    Huynh, C.
    Nguyen, C.
    2010 IEEE ANTENNAS AND PROPAGATION SOCIETY INTERNATIONAL SYMPOSIUM, 2010,
  • [22] A K-BAND LOW-NOISE AMPLIFIER IN 0.18-μm CMOS TECHNOLOGY FOR SUB-1-V OPERATION
    Jin, Jun-De
    Hsu, Shawn S. H.
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2009, 51 (09) : 2202 - 2204
  • [23] A 1-V Low-Voltage 12-GHz VCO in 0.18-μm CMOS technology
    Chen, X. -S.
    Chen, Y. -T.
    Chuang, H. -R.
    APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5, 2008, : 2039 - 2042
  • [24] Submicron CMOS technologies for low-noise analog front-end circuits
    Manghisoni, M
    Ratti, L
    Re, V
    Speziali, V
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (04) : 1783 - 1790
  • [25] A Low-Power and Low-Noise 21∼29 GHz Ultra-Wideband Receiver Front-End in 0.18 μm CMOS Technology
    Huang, Sheng-Li
    Lin, Yo-Sheng
    Lee, Jen-How
    2011 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2011,
  • [26] Deep submicron CMOS transistors for low-noise front-end systems
    Manghisoni, M
    Ratti, L
    Re, V
    Speziali, V
    2001 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORDS, VOLS 1-4, 2002, : 999 - 1003
  • [27] A broadband low-noise front-end amplifier for ultra wideband in 0.13-μm CMOS
    Gharpurey, R
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (09) : 1983 - 1986
  • [28] A 5.6-GHz 1-V Low Power Balanced Colpitts VCO in 0.18-μm CMOS Process
    Huang, Jhin-Fang
    Lai, Wen-Cheng
    Huang, Kun-Jie
    IEICE TRANSACTIONS ON ELECTRONICS, 2013, E96C (06): : 942 - 945
  • [29] An eight channel low-noise CMOS readout circuit for silicon detectors with on-chip front-end FET
    Fiorini, C.
    Porro, M.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2006, 568 (01): : 101 - 105
  • [30] Low power 0.18μm CMOS dual-band front-end
    Phansathitwong, Kittichai
    Sjoland, Henrik
    2005 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE, PROCEEDINGS OF TECHNICAL PAPERS, 2005, : 81 - 84