Channel Design for Wide System Bandwidth in a TSV based 3D IC

被引:0
|
作者
Kim, Heegon [1 ]
Cho, Jonghyun [1 ]
Kim, Joohee [1 ]
Kim, Myunghoi [1 ]
Lee, Junho [2 ]
Lee, Hyungdong [2 ]
Park, Kunwoo [2 ]
Kim, Joungho [1 ]
Pak, Jun So [1 ]
机构
[1] Korea Adv Inst Sci & Technol, TERA Lab, 373-1 Guseong, Taejon 305701, South Korea
[2] Hynix Semicond Inc, Adv Design Team, Icheon, Kyoungki Do, South Korea
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, the design guidance of the channel in a through-silicon via (TSV) based three-dimensional integrated circuit (3D IC) for wide system bandwidth was described. First, the multi-stacked TSV and the silicon interposer interconnects were modeled for efficient analysis. Based on these developed models of the 3D IC interconnect, the multi-stacked TSV and the silicon interposer interconnect for wide single-channel bandwidths were analyzed. Finally, the optimized structure of the 3D IC interconnect for wide system bandwidth was obtained by consideration with the number of I/Os. This design guidance can be extended to different 3D IC system by using the analysis of the interconnect characteristic of TSV and the silicon interposer.
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页码:57 / 60
页数:4
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