TSV modelling in 3D IC thermoelectric simulation

被引:0
|
作者
Ye, Tongyang [1 ]
Hou, Ligang [1 ]
Zhang, Shier [1 ]
Wang, Jinhui [2 ]
Peng, Xiaohong [1 ]
机构
[1] Beijing Univ Technol, VLSI & Syst Lab, Beijing 100124, Peoples R China
[2] North Dakota State Univ, Dept Elect & Comp Engn, Fargo, ND 58102 USA
关键词
TSV; modelling; thermoelectric simulation;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In three-dimensional integrated circuit, model's establishment can help us to design the chip and analyze its performance effectively. In previous studies, most modelling was based on a single physical field, which could not completely simulate the actual working environment of the chip. In this paper, we establish a TSV model in 3D IC thermoelectric simulation. Modelling is based on the multi physical field coupling and uses COMSOL software to create a more realistic work scenario for the chip. By establishing the model and setting the boundary conditions, we studied the thermal distribution and electrical distribution of the chip. Finally we discussed several factors influencing the thermal distribution of the chip.
引用
收藏
页码:678 / 681
页数:4
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