A 9.08 ENOB 10b 400MS/s Subranging SAR ADC with Subsetted CDAC and PDAS in 40nm CMOS

被引:6
|
作者
Yu, Qiang [1 ]
Zhou, Xiong [1 ]
Hu, Kefeng [1 ]
Huang, Zijian [1 ]
Chen, Haiwen [1 ]
Si, Xin [1 ]
Yang, Jinda [2 ]
Li, Qiang [1 ]
机构
[1] Univ Elect Sci & Technol China, Inst Integrated Circuits & Syst, Chengdu, Peoples R China
[2] Chengdu Sino Microelect Technol, Chengdu, Peoples R China
基金
中国国家自然科学基金;
关键词
SAR ADC; subranging; PDAS; dynamic circuit design;
D O I
10.1109/ESSCIRC53450.2021.9567859
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, a 10b 400MS/s single-channel SAR ADC is reported. Without an auxiliary sub-ADC, a subranging architecture is proposed, where only one comparator is used with the subsetted capacitive DAC (CDAC), eliminating the mismatch of comparators and saving area. For the subranging process, a partial detect-and-skip (PDAS) switching scheme is proposed, which improves both power efficiency and linearity without delay overhead. In addition, the dynamic logic circuits, including dynamic asynchronous loop (DAL) and dynamic SAR logic (DSL), are improved to reduce the power and logic propagation delay. Fabricated in a 40 nm CMOS process, this single-channel prototype operates at an enhanced sampling rate of 400 MS/s. At Nyquist, 56.4 dB SNDR and 73.1 dB SFDR are achieved. The ADC draws 3.46mW from a single 1.2V supply, leading to a FoMw of 16.0fJ/ conversion-step.
引用
收藏
页码:391 / 394
页数:4
相关论文
共 50 条
  • [21] 8 b 10 MS/s differential SAR ADC in 28 nm CMOS for precise energy measurement
    Kaczmarczyk, P.
    Kmon, P.
    JOURNAL OF INSTRUMENTATION, 2022, 17 (03):
  • [22] A 10 b 50 MS/s two-stage pipelined SAR ADC in 180 nm CMOS
    沈易
    刘术彬
    朱樟明
    Journal of Semiconductors, 2016, (06) : 140 - 144
  • [23] A 10b 42MS/s SAR ADC with Power Efficient Design
    Hu Hongfei
    Liu Yihua
    Li Xiaopeng
    Zhang Youtao
    Guo Yufeng
    Gao Hao
    Zhang Yi
    2021 THE 6TH INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2021), 2021, : 1 - 4
  • [24] A 10 b 50 MS/s two-stage pipelined SAR ADC in 180 nm CMOS
    沈易
    刘术彬
    朱樟明
    Journal of Semiconductors, 2016, 37 (06) : 140 - 144
  • [25] A 12-bit 50MS/s SAR ADC with Non-binary Split Capacitive DAC in 40nm CMOS
    Hou, Xueshi
    Duan, Zongming
    Huang, Zhixiang
    Wu, Bowen
    Zhao, Dixian
    Feng, Jian
    Fang, Ming
    IEICE ELECTRONICS EXPRESS, 2024, 21 (16): : 1 - 6
  • [26] A 3.2GS/s 4.55b ENOB Two-Step Subranging ADC in 45nm SOI CMOS
    Plouchart, J. -O.
    Sanduleanu, M. A. T.
    Toprak-Deniz, Z.
    Beukema, T. J.
    Reynolds, S.
    Parker, B. D.
    Beakes, M.
    Tierno, J. A.
    Friedman, D.
    2012 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2012,
  • [27] A 10.4-ENOB 120MS/s SAR ADC with DAC Linearity Calibration in 90nm CMOS
    Zhu, Yan
    Chan, Chi-Hang
    Seng-Pan, U.
    Martins, R. P.
    PROCEEDINGS OF THE 2013 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC), 2013, : 69 - 72
  • [28] A 1.4mW 8b 350MS/s Loop-Unrolled SAR ADC with Background Offset Calibration in 40nm CMOS
    Ragab, Kareem
    Sun, Nan
    ESSCIRC CONFERENCE 2016, 2016, : 417 - 420
  • [29] An area-and-power-efficient 8.4-bit ENOB 30 MS/s SAR ADC in 65 nm CMOS
    Xu, Ye
    Harpe, Pieter
    Ytterdal, Trond
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2017, 90 (01) : 17 - 27
  • [30] A 9.15mW 0.22mm2 10b 204MS/s Pipelined SAR ADC in 65nm CMOS
    Jeon, Young-Deuk
    Cho, Young-Kyun
    Nam, Jae-Won
    Kim, Kwi-Dong
    Lee, Woo-Yol
    Hong, Kuk-Tae
    Kwon, Jong-Kee
    IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE 2010, 2010,