Spin relaxation and weak antilocalization in a high density 2D electron gas in a AlGaN/GaN heterostructure

被引：0

作者：

Kim, Ki-Won ^{[1
]}

Kvon, Z. D. ^{[2
]}

Lee, J. H. ^{[1
]}

Olshanetsky, E. B. ^{[2
]}

Portal, J. C. ^{[3
,4
]}

机构：

[1] Kyungpook Natl Univ, 1370 Sankyuk Dong, Taegu, South Korea

[2] Inst Semicond Phys, Novosibirsk 630090, Russia

[3] CNRS, GHMF, MPI, FKF, F-38042 Grenoble 9, France

[4] INSA Toulouse, F-31077 Toulouse 4, France

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

GaN devices; Weak antilocalization; Small-angle scattering; QUANTUM-WELLS;

D O I：

10.1063/1.3666576

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the present article we summarize the results of our study of the low field magnetoresistance (MR) in AlGaN/GaN samples with a two-dimensional electron gas (2DEG). All investigated samples have very close basic transport parameters, such as electron mobility and electron density, but show a rich variety of low magnetic field magnetoresistance behavior.

引用

页数：2

共 50 条

[41] Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression
何晓光
赵德刚
江德生
ChinesePhysicsB, 2015, 24 (06) : 520 - 524
[42] Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas
Spirito, D.
Di Gaspare, L.
Evangelisti, F.
Di Gaspare, A.
Giovine, E.
Notargiacomo, A.
PHYSICAL REVIEW B, 2012, 85 (23):
[43] Kinetics of photoluminescence of two-dimensionally electron gas in AlGaN/GaN heterostructure
Korzhavina, Natalie S.
Shamirzaev, Timur S.
Mansurov, Vladimir G.
Zhuravlev, Konstantin S.
EDM 2006: 7TH ANNUAL INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, PROCEEDINGS, 2006, : 69 - +
[44] On the origin of the two-dimensional electron gas at the AlGaN/GaN heterostructure interface
Koley, G
Spencer, MG
APPLIED PHYSICS LETTERS, 2005, 86 (04) : 042107 - 1
[45] Piezotronic effect on two-dimensional electron gas in AlGaN/ GaN heterostructure
Huang, Fobao
Chen, Jianghua
Ding, Yiluo
Huang, Wei
NANO ENERGY, 2022, 96
[46] Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure
Shalygin, V. A.
Moldavskaya, M. D.
Vinnichenko, M. Ya.
Maremyanin, K. V.
Artemyev, A. A.
Panevin, V. Yu.
Vorobjev, L. E.
Firsov, D. A.
Korotyeyev, V. V.
Sakharov, A. V.
Zavarin, E. E.
Arteev, D. S.
Lundin, W. V.
Tsatsulnikov, A. F.
Suihkonen, S.
Kauppinen, C.
JOURNAL OF APPLIED PHYSICS, 2019, 126 (18)
[47] Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructure
Gosselin, Jean-Lou
Valizadeh, Pouya
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (11) : 4800 - 4806
[48] A deterministic study of hot phonon effects in a 2D electron gas channel formed at an AlGaN/GaN heterointerface
Ertler, Christian
Schuerrer, Ferdinand
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2006, 5 (01) : 15 - 26
[49] Low-temperature transport in AlGaN/GaN 2D electron systems
Vitusevich, SA
Kurakin, AM
Danylyuk, SV
Klein, N
Lüth, H
Belyaev, AE
PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2005, 772 : 459 - 460
[50] A deterministic study of hot phonon effects in a 2D electron gas channel formed at an AlGaN/GaN heterointerface
C. Ertler
F. Schürrer
Journal of Computational Electronics, 2006, 5 : 15 - 26

← 1 2 3 4 5 →