Spin relaxation and weak antilocalization in a high density 2D electron gas in a AlGaN/GaN heterostructure

被引：0
|
作者：
Kim, Ki-Won [1 ]
Kvon, Z. D. [2 ]
Lee, J. H. [1 ]
Olshanetsky, E. B. [2 ]
Portal, J. C. [3 ,4 ]
机构：
[1] Kyungpook Natl Univ, 1370 Sankyuk Dong, Taegu, South Korea
[2] Inst Semicond Phys, Novosibirsk 630090, Russia
[3] CNRS, GHMF, MPI, FKF, F-38042 Grenoble 9, France
[4] INSA Toulouse, F-31077 Toulouse 4, France
来源：
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷
关键词：
GaN devices; Weak antilocalization; Small-angle scattering; QUANTUM-WELLS;
D O I：
10.1063/1.3666576
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the present article we summarize the results of our study of the low field magnetoresistance (MR) in AlGaN/GaN samples with a two-dimensional electron gas (2DEG). All investigated samples have very close basic transport parameters, such as electron mobility and electron density, but show a rich variety of low magnetic field magnetoresistance behavior.
引用
收藏
页数：2
相关论文
共 50 条
  • [31] The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas
    Lundin, V. V.
    Sakharov, A. V.
    Zavarin, E. E.
    Zakgeim, D. A.
    Nikolaev, A. E.
    Brunkov, P. N.
    Yagovkina, M. A.
    Tsatsul'nikov, A. F.
    TECHNICAL PHYSICS LETTERS, 2018, 44 (07) : 577 - 580
  • [32] The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas
    V. V. Lundin
    A. V. Sakharov
    E. E. Zavarin
    D. A. Zakgeim
    A. E. Nikolaev
    P. N. Brunkov
    M. A. Yagovkina
    A. F. Tsatsul’nikov
    Technical Physics Letters, 2018, 44 : 577 - 580
  • [33] High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures
    Shao, Pengfei
    Fan, Xing
    Li, Siqi
    Chen, Songlin
    Zhou, Hui
    Liu, Huan
    Guo, Hui
    Xu, Weizong
    Tao, Tao
    Xie, Zili
    Lu, Hong
    Wang, Ke
    Liu, Bin
    Chen, Dunjun
    Zheng, Youdou
    Zhang, Rong
    APPLIED PHYSICS LETTERS, 2023, 122 (14)
  • [34] Spin effects in the 2D electron gas
    Senatore, G
    Moroni, S
    Varsano, D
    SOLID STATE COMMUNICATIONS, 2001, 119 (4-5) : 333 - 340
  • [35] Quantum Coherence and the Kondo Effect in the 2D Electron Gas of Magnetically Undoped AlGaN/GaN High-Electron-Mobility Transistor Heterostructures
    N. K. Chumakov
    I. A. Chernykh
    A. B. Davydov
    I. S. Ezubchenko
    Yu. V. Grishchenko
    L. L. Lev
    I. O. Maiboroda
    L. A. Morgun
    V. N. Strocov
    V. G. Valeyev
    M. L. Zanaveskin
    Semiconductors, 2020, 54 : 1150 - 1154
  • [36] Quantum Coherence and the Kondo Effect in the 2D Electron Gas of Magnetically Undoped AlGaN/GaN High-Electron-Mobility Transistor Heterostructures
    Chumakov, N. K.
    Chernykh, I. A.
    Davydov, A. B.
    Ezubchenko, I. S.
    Grishchenko, Yu. V.
    Lev, L. L.
    Maiboroda, I. O.
    Morgun, L. A.
    Strocov, V. N.
    Valeyev, V. G.
    Zanaveskin, M. L.
    SEMICONDUCTORS, 2020, 54 (09) : 1150 - 1154
  • [37] Intrinsic Limits of Electron Mobility in Modulation-Doped AlGaN/GaN 2D Electron Gas by Phonon Scattering
    Liang Pang
    Journal of Electronic Science and Technology, 2014, 12 (04) : 415 - 418
  • [38] Intrinsic Limits of Electron Mobility in Modulation-Doped AlGaN/GaN 2D Electron Gas by Phonon Scattering
    Liang Pang
    Journal of Electronic Science and Technology, 2014, (04) : 415 - 418
  • [39] Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression
    He Xiao-Guang
    Zhao De-Gang
    Jiang De-Sheng
    CHINESE PHYSICS B, 2015, 24 (06)
  • [40] THE INSTABILITY OF 2D ELECTRON-GAS AT HIGH-DENSITY
    SUN, X
    XIE, HK
    ZHOU, SX
    SURFACE SCIENCE, 1986, 170 (1-2) : 422 - 425
12345