Spin relaxation and weak antilocalization in a high density 2D electron gas in a AlGaN/GaN heterostructure

被引：0
|
作者：
Kim, Ki-Won [1 ]
Kvon, Z. D. [2 ]
Lee, J. H. [1 ]
Olshanetsky, E. B. [2 ]
Portal, J. C. [3 ,4 ]
机构：
[1] Kyungpook Natl Univ, 1370 Sankyuk Dong, Taegu, South Korea
[2] Inst Semicond Phys, Novosibirsk 630090, Russia
[3] CNRS, GHMF, MPI, FKF, F-38042 Grenoble 9, France
[4] INSA Toulouse, F-31077 Toulouse 4, France
来源：
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷
关键词：
GaN devices; Weak antilocalization; Small-angle scattering; QUANTUM-WELLS;
D O I：
10.1063/1.3666576
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the present article we summarize the results of our study of the low field magnetoresistance (MR) in AlGaN/GaN samples with a two-dimensional electron gas (2DEG). All investigated samples have very close basic transport parameters, such as electron mobility and electron density, but show a rich variety of low magnetic field magnetoresistance behavior.
引用
收藏
页数：2
相关论文
共 50 条
  • [21] The Kondo effect in 2D electron gas of magnetically undoped AlGaN/GaN high-electron-mobility transistor heterostructures
    Chumakov, N. K.
    Chernykh, I. A.
    Davydov, A. B.
    Ezubchenko, I. S.
    Grishchenko, Yu V.
    Lev, L. L.
    Maiboroda, I. O.
    Strocov, V. N.
    Valeyev, V. G.
    Zanaveskin, M. L.
    VII EURO-ASIAN SYMPOSIUM TRENDS IN MAGNETISM, 2019, 1389
  • [22] Light-tunable 2D subband population in a GaN/AlGaN heterostructure
    Solovyev, V. V.
    Schmult, S.
    Krueckeberg, L.
    Grosser, A.
    Mikolajick, T.
    Kukushkin, I. V.
    APPLIED PHYSICS LETTERS, 2021, 118 (01)
  • [23] Spin-splitting collapse in a 2D electron gas in AlGaAs/GaAs heterostructure
    Gusev, GM
    Kvon, ZD
    Olshanetsky, EB
    Maude, DK
    Portal, JC
    PHYSICA B-CONDENSED MATTER, 1998, 249 : 771 - 774
  • [24] An unambiguous identification of 2D electron gas features in the photoluminescence spectrum of AlGaN/GaN heterostructures
    Jana, Dipankar
    Sharma, T. K.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (26)
  • [25] Strain-induced enhancement of 2D electron gas density in AlGaN/GaN heterojunction: a first-principles study
    Cao, Yuelong
    Guan, Qi
    He, Yang
    Wang, Xinmei
    Zhang, Lin
    Li, Enling
    Jia, Wanli
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2024, 57 (14)
  • [26] Comment on "Antilocalization in a 2D electron gas in a random magnetic field" - Reply
    Taras-Semchuk, D
    Efetov, KB
    PHYSICAL REVIEW LETTERS, 2001, 86 (16) : 3689 - 3689
  • [27] High electron mobility AlGaN/GaN heterostructure on (111) Si
    Schremer, AT
    Smart, JA
    Wang, Y
    Ambacher, O
    MacDonald, NC
    Shealy, JR
    APPLIED PHYSICS LETTERS, 2000, 76 (06) : 736 - 738
  • [28] Electroreflectance of the AlGaN/GaN heterostructure and two-dimensional electron gas
    Kurtz, SR
    Allerman, AA
    Koleske, DD
    Peake, GM
    APPLIED PHYSICS LETTERS, 2002, 80 (24) : 4549 - 4551
  • [29] Determination of the electron effective mass of 2D electrons in AlGaN/AlN/GaN heterostructure by Raman-scattering measurements
    Tiras, Engin
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2012, 14 (9-10): : 787 - 791
  • [30] Polarization induced 2D hole gas in GaN/AlGaN heterostructures
    Hackenbuchner, S
    Majewski, JA
    Zandler, G
    Vogl, P
    JOURNAL OF CRYSTAL GROWTH, 2001, 230 (3-4) : 607 - 610
12345