Kinetics of photoluminescence of two-dimensionally electron gas in AlGaN/GaN heterostructure

In this work statistician photoluminescence and photoluminescence kinetics of two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure has been studied. 2DEG was formed at GaN/AlGaN heterostructure by doping of AlGaN layer. Two lines present in a low temperature (4,2K) PL spectrum of the GaN/AlGaN structure: a line A results from of excitonic recombination in GaN and a line B is due to recombination of electron of 2DEG. Transient PL spectra of the structure demonstrate that the line A decay time is shorter than 10(-8) sec, while the line B demonstrates a nonexponential decay with duration of several tens of microseconds and a red shift with time after excitation pulse. The experimental results were explained in framework of a model of special separation of two-dimensional electrons and holes localized at acceptors.