Kinetics of photoluminescence of two-dimensionally electron gas in AlGaN/GaN heterostructure

被引：0
|
作者：
Korzhavina, Natalie S. [1 ]
Shamirzaev, Timur S. [1 ]
Mansurov, Vladimir G. [1 ]
Zhuravlev, Konstantin S. [1 ]
机构：
[1] Inst Semicond Phys, Novosibirsk, Russia
来源：
EDM 2006: 7TH ANNUAL INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, PROCEEDINGS | 2006年
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
暂无
中图分类号：
O42 [声学];
学科分类号：
070206 ; 082403 ;
摘要：
In this work statistician photoluminescence and photoluminescence kinetics of two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure has been studied. 2DEG was formed at GaN/AlGaN heterostructure by doping of AlGaN layer. Two lines present in a low temperature (4,2K) PL spectrum of the GaN/AlGaN structure: a line A results from of excitonic recombination in GaN and a line B is due to recombination of electron of 2DEG. Transient PL spectra of the structure demonstrate that the line A decay time is shorter than 10(-8) sec, while the line B demonstrates a nonexponential decay with duration of several tens of microseconds and a red shift with time after excitation pulse. The experimental results were explained in framework of a model of special separation of two-dimensional electrons and holes localized at acceptors.
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页码：69 / +
页数：2
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