Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

被引：2
|
作者：
Chu, RM [1 ]
Zheng, YD [1 ]
Zhou, YG [1 ]
Han, P [1 ]
Shen, B [1 ]
Gu, SL [1 ]
机构：
[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2002年 / 75卷 / 03期
关键词：
D O I：
10.1007/s003390100978
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The two-dimensional electron gas distribution in AlGaN/GaN high electron mobility transistors is determined from the solution of the coupled Schrodinger's and Poisson's equations. Considering the piezoelectric effect, the two-dimensional electron gas concentration is calculated to be as high as 7.7 x 10(19) cm(-3). In order to obtain an understanding of how the two-dimensional electron gas distribution is influenced by dopants in GaN, we observed the two-dimensional electron gas concentration and occupation of sub-bands versus dopant concentration in the GaN layer of an AlGaN/GaN heterostructure. Our results show that the two-dimensional electron gas concentration is slightly increased at higher doping levels in GaN, while the quantum confinement in the AlGaN/GaN heterostructure is weakened with the increase of donor concentration in the GaN layer.
引用
收藏
页码：387 / 389
页数：3
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