Optical properties related to a two-dimensional electron gas at an AlGaN/GaN heterostructure

被引：8
|
作者：
Park, YS [1 ]
Na, JH
Lee, HS
Kim, HJ
Park, CM
Choi, SW
Fu, DJ
Kang, TW
Oh, JE
机构：
[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
[2] Hanyang Univ, Sch Elect & Comp Engn, Ansan 425791, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 43卷 / 05期
关键词：
AlGaN/GaN; photoluminescence; 2-dimensional electron gases;
D O I：
10.3938/jkps.43.743
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report photoluminescence (PL) spectra related to a two-dimensional electron gas (2DEG) confined at an AlGaN/GaN heterointerface. The 2DEG related the PL has been identified by measuring PL of the structure as functions of the light intensity and the temperature and by comparing the results with those obtained for GaN exposed via etching. The PL peak related to recombination between the two-dimensional electron gas and photoexcited holes is located at 3.436 eV at 15 K, which is 28 meV below the bound exciton (DOX) emission in GaN. The activation energy is about 10.8 meV.
引用
收藏
页码：743 / 746
页数：4
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