MeV electron irradiation of O+ or P+ implanted Si-SiO2 structures

O+ or P+ ion implanted Si-SiO2 structures irradiated by high-energy electrons have been studied using Rutherford back-scattering spectroscopy in combination with a channelling technique (RBS/C). The samples were implanted by a dose of 10(12) cm(-2) O+ or P+ ions, and then irradiated by two doses of 20 MeV electrons -2.5x10(13) el.cm(-2) and 1x10(15) el.cm(-2). The changes in the silicon and oxygen concentrations of the implanted samples were observed after electron irradiation. Such changes have been previously observed in Si-SiO2 structures implanted by a higher dose (10(16) cm(-2)) of Si+ ions followed by MeV electron irradiation. The results showed that the type of implanted ion determines the concentration changes observed in the samples after high-energy electron irradiation. In the case reported here, the RBS/C spectra demonstrate that the 20-MeV electron irradiation increases the oxygen and silicon concentrations in Si-SiO2 samples implanted by O+ ions only, connected with the displacement of these atoms from their normal lattice sites.