INVERSION ELECTRON MOBILITY IN Si-SiO2 STRUCTURES OXIDIZED AT LOW AND HIGH TEMPERATURES.

被引：0
|
作者：
Kassabov, J. [1 ]
Dimitrov, D. [1 ]
Koprinarova, J. [1 ]
机构：
[1] Bulgarian Acad of Sciences, Sofia, Bulg, Bulgarian Acad of Sciences, Sofia, Bulg
来源：
Microelectronics Journal | 1986年 / 17卷 / 05期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
23
引用
收藏
页码：15 / 22
相关论文
共 50 条
  • [1] Effect of MeV electron irradiation on Si-SiO2 structures
    Kaschieva, S.
    Gushterov, A.
    Angelov, Ch
    Dmitriev, S. N.
    18TH INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON AND ION TECHNOLOGIES (VEIT2013), 2014, 514
  • [2] DEPENDENCE OF ELECTRON CHANNEL MOBILITY ON SI-SIO2 INTERFACE MICROROUGHNESS
    OHMI, T
    KOTANI, K
    TERAMOTO, A
    MIYASHITA, M
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (12) : 652 - 654
  • [3] HALL EFFECT MEASUREMENTS OF HOLE MOBILITY IN AN INVERSION LAYER AT SI-SIO2 INTERFACE
    TOSCANOR.A
    PFISTER, JC
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 5 (01): : 209 - &
  • [4] INVESTIGATION OF TRAPS IN THE TRANSITION REGION OF SI-SIO2 STRUCTURES AT CRYOGENIC TEMPERATURES
    LYSENKO, VS
    SYTENKO, TN
    ZIMENKO, VI
    SNITKO, OV
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 71 (02): : 619 - 626
  • [5] High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+
    Kaschieva, S.
    Angelov, Ch
    Dmitriev, S. N.
    20TH INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON AND ION TECHNOLOGIES, 2017, 2018, 992
  • [6] EFFECT OF CRYSTAL ORIENTATION UPON ELECTRON MOBILITY AT SI-SIO2 INTERFACE
    OHWADA, A
    MAEDA, H
    TANAKA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (05) : 629 - &
  • [7] Electrical characterisation of Si-SiO2 structures
    Capan, Ivana
    Pivac, Branko
    Slunjski, Robert
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3, 2011, 8 (03): : 816 - 818
  • [8] PHOTOMAGNETIC EFFECT IN SI-SIO2 STRUCTURES
    SACHENKO, AV
    NOVOMINSKII, BA
    AIVAZOV, VY
    KALSHABEKOV, AS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (02): : 162 - 165
  • [9] Luminescence of Degraded Si-SiO2 Structures
    Baraban, A. P.
    Dmitriev, V. A.
    Gadzhala, A. A.
    RUSSIAN PHYSICS JOURNAL, 2014, 57 (05) : 627 - 632
  • [10] CHARACTERISTICS OF THE SI-SIO2 PHASE-BOUNDARY AND THE SURFACE MOBILITY OF HOLES IN AN INVERSION LAYER
    URITSKII, VY
    ROMANOV, OV
    YAFYASOV, AM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (03): : 247 - 249
12345