INVERSION ELECTRON MOBILITY IN Si-SiO2 STRUCTURES OXIDIZED AT LOW AND HIGH TEMPERATURES.

被引：0
|
作者：
Kassabov, J. [1 ]
Dimitrov, D. [1 ]
Koprinarova, J. [1 ]
机构：
[1] Bulgarian Acad of Sciences, Sofia, Bulg, Bulgarian Acad of Sciences, Sofia, Bulg
来源：
Microelectronics Journal | 1986年 / 17卷 / 05期
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摘要：
23
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页码：15 / 22
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