ELECTRON-HOLE RECOMBINATION AT THE SI-SIO2 INTERFACE

被引:56
|
作者
YABLONOVITCH, E
SWANSON, RM
EADES, WD
WEINBERGER, BR
机构
[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
[2] UNITED TECHNOL RES LAB,EAST HARTFORD,CT 06108
关键词
D O I
10.1063/1.96570
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:245 / 247
页数:3
相关论文
共 50 条
  • [1] Coupled electron-hole dynamics at the Si/SiO2 interface
    Wang, W
    Lupke, G
    Di Ventra, M
    Pantelides, ST
    Gilligan, JM
    Tolk, NH
    Kizilyalli, IC
    Roy, PK
    Margaritondo, G
    Lucovsky, G
    PHYSICAL REVIEW LETTERS, 1998, 81 (19) : 4224 - 4227
  • [2] NATURE OF RECOMBINATION CENTERS OF SI-SIO2 INTERFACE
    GORBAN, AP
    LITOVCHE.VG
    ROMANYUK, BN
    PATAKI, G
    NEMETH-S.M
    LORINCZY, A
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 24 (01): : K1 - K5
  • [3] EXPERIMENTAL-VERIFICATION OF ELECTRON-HOLE RECOMBINATION THEORY FOR SI-SIO2 INTERFACE TRAPS WITH NON-EQUILIBRIUM, STEADY-STATE, ADMITTANCE MEASUREMENTS
    AGARWAL, AK
    RHODES, FM
    WHITE, MH
    APPLIED PHYSICS LETTERS, 1983, 43 (05) : 465 - 467
  • [4] Effect of Phosphorus Diffusion to the Recombination at the Si-SiO2 Interface
    Jin, H.
    Weber, K. J.
    Zhang, C.
    PROGRESS IN PHOTOVOLTAICS, 2009, 17 (03): : 177 - 181
  • [5] CALCULATION OF SURFACE GENERATION AND RECOMBINATION VELOCITIES AT THE SI-SIO2 INTERFACE
    EADES, WD
    SWANSON, RM
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4267 - 4276
  • [6] ELECTRON PARAMAGNETIC RESONANCE INVESTIGATION OF SI-SIO2 INTERFACE
    REVESZ, AG
    GOLDSTEIN, B
    SURFACE SCIENCE, 1969, 14 (02) : 361 - +
  • [7] Si-SiO2 electronic interface roughness as a consequence of Si-SiO2 topographic interface roughness
    LSI/PEE/EPUSP, Sao Paulo, Brazil
    J Electrochem Soc, 3 (1021-1025):
  • [8] Si-SiO2 electronic interface roughness as a consequence of Si-SiO2 topographic interface roughness
    Lopes, MCV
    dosSantos, SG
    Hasenack, CM
    Baranauskas, V
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (03) : 1021 - 1025
  • [9] METASTABILITIES OF SI-SIO2 INTERFACE
    WHITE, CT
    NGAI, KL
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 462 - 463
  • [10] MORPHOLOGY OF SI-SIO2 INTERFACE
    SUGANO, T
    CHEN, JJ
    HAMANO, T
    SURFACE SCIENCE, 1980, 98 (1-3) : 154 - 166