MeV electron irradiation of O+ or P+ implanted Si-SiO2 structures

被引：0
|
作者：
Kaschieva, S. [1 ]
Angelov, Ch. [2 ]
Dmitriev, S. N. [3 ]
机构：
[1] Bulgarian Acad Sci, Inst Solid State Phys, Sofia 1784, Bulgaria
[2] Bulgarian Acad Sci, Inst Nucl Res & Nucl Energy, BU-1784 Sofia, Bulgaria
[3] Joint Inst Nucl Res, Flerov Lab Nucl React, Dubna 141980, Moscow Region, Russia
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2009年 / 11卷 / 10期
关键词：
Electron irradiation; Ion implantation; Si-SiO2; structure; RBS;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
O+ or P+ ion implanted Si-SiO2 structures irradiated by high-energy electrons have been studied using Rutherford back-scattering spectroscopy in combination with a channelling technique (RBS/C). The samples were implanted by a dose of 10(12) cm(-2) O+ or P+ ions, and then irradiated by two doses of 20 MeV electrons -2.5x10(13) el.cm(-2) and 1x10(15) el.cm(-2). The changes in the silicon and oxygen concentrations of the implanted samples were observed after electron irradiation. Such changes have been previously observed in Si-SiO2 structures implanted by a higher dose (10(16) cm(-2)) of Si+ ions followed by MeV electron irradiation. The results showed that the type of implanted ion determines the concentration changes observed in the samples after high-energy electron irradiation. In the case reported here, the RBS/C spectra demonstrate that the 20-MeV electron irradiation increases the oxygen and silicon concentrations in Si-SiO2 samples implanted by O+ ions only, connected with the displacement of these atoms from their normal lattice sites.
引用
收藏
页码：1502 / 1504
页数：3
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