ANALYSIS OF DARLINGTON PAIR AMPLIFIER AT 90nm TECHNOLOGY

被引：0

作者：

Singh, Rashmi ^{[1
]}

Mehra, Rajesh ^{[1
]}

机构：

[1] Natl Inst Tech Teachers Training & Res, Dept Elect & Commun, Chandigarh, India

来源：

2016 INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS, AND OPTIMIZATION TECHNIQUES (ICEEOT) | 2016年

关键词：

Pair; Load capacitor; Circuit simulation; Circuit design; Small signal amplifier; 90nm technology;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The demand of transistors is rising in today's communication system having high data rate. Transistors are used in many applications where high gain is needed by using very low frequency. In today's communication system amplifier is used in many applications such as low noise amplifier, broadband mixer, distributed amplifier, power amplifier etc. The pair amplifier satisfy all parameters which is required by today's technology such as-high speed transmission efficiency, less power consumption and less circuitrary to be used pair is used in advanced version of small signal amplifier with additional biasing resistance which improves voltage gain and widening of bandwidth. It also removes poor frequency response of pair amplifier at higher frequency. In this paper, cadence software is used to study the circuit of two-stage amplifier. In this paper after adding biasing resistance in emitter terminal of first transistor we can increase the voltage gain, current gain, output current and output voltage of pair amplifier. GPDK 90nm technology is used in this paper.

引用

页码：3637 / 3641

页数：5

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