Effect of indium droplets on growth of InGaN film by molecular beam epitaxy

被引：12

作者：

Zheng, Xiantong ^{[1
]}

Liang, Hongwei ^{[1
]}

Wang, Ping ^{[2
]}

Sun, Xiaoxiao ^{[2
]}

Chen, Zhaoying ^{[2
]}

Wang, Tao ^{[2
]}

Sheng, Bowen ^{[2
]}

Wang, Yixin ^{[2
]}

Chen, Ling ^{[2
]}

Wang, Ding ^{[2
]}

Rong, Xin ^{[2
]}

Li, Mo ^{[4
]}

Zhang, Jian ^{[4
]}

Wang, Xinqiang ^{[2
,3
]}

机构：

[1] Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China

[2] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[3] Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China

[4] CAEP, Microsyst & Terahertz Res Ctr, 596 Yinhe Rd, Chengdu 610200, Sichuan, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 113卷

关键词：

In droplet; InGaN; MBE; QUANTUM-WELLS;

D O I：

10.1016/j.spmi.2017.11.053

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Effect of indium (In) droplets on InGaN thin films grown by molecular beam epitaxy (MBE) has been investigated. The surface of InGaN covered by In droplets shows a smoother topography than that without droplets, indicating that the presence of In droplets is beneficial to the two dimensional growth. Beneath the In droplets, many ring-like structures are observed. The arrangement of these "ring" shows the movement of the In droplets during the InGaN growth. A qualitative growth model is proposed to explain the evolution of the InGaN surface morphology in In-droplet-induced-epitaxy process, giving an explanation that a local vapor-liquid-solid (VLS) system is preferentially formed at the edge of the droplets, leading to a high growth rate. Furthermore, the energy dispersive Xray spectroscopy results reveal that the relatively higher In/Ga flux ratio in the region covered by the In droplet results in a locally higher In content. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：650 / 656

页数：7

共 50 条

[31] Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy
North Carolina State Univ, Raleigh, United States
J Cryst Growth, pt 1 (72-78):
[32] Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy
Jmerik, V. N.
Mizerov, A. M.
Shubina, T. V.
Plotnikov, D. S.
Zamoryanskaya, M. V.
Yagovkina, M. A.
Domracheva, Ya. V.
Sitnikova, A. A.
Ivanov, S. V.
SEMICONDUCTORS, 2008, 42 (05) : 616 - 623
[33] Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy
Bazioti, C.
Papadomanolaki, E.
Kehagias, Th.
Walther, T.
Smalc-Koziorowska, J.
Pavlidou, E.
Komninou, Ph.
Karakostas, Th.
Iliopoulos, E.
Dimitrakopulos, G. P.
JOURNAL OF APPLIED PHYSICS, 2015, 118 (15)
[34] Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy
V. N. Jmerik
A. M. Mizerov
T. V. Shubina
D. S. Plotnikov
M. V. Zamoryanskaya
M. A. Yagovkina
Ya. V. Domracheva
A. A. Sitnikova
S. V. Ivanov
Semiconductors, 2008, 42 : 616 - 623
[35] Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
Morassi, Martina
Largeau, Ludovic
Oehler, Fabrice
Song, Hyun-Gyu
Travers, Laurent
Julien, Francois H.
Harmand, Jean-Christophe
Cho, Yong-Hoon
Glas, Frank
Tchernycheva, Maria
Gogneau, Noelle
CRYSTAL GROWTH & DESIGN, 2018, 18 (04) : 2545 - 2554
[36] Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations
Adelmann, C
Langer, R
Feuillet, G
Daudin, B
APPLIED PHYSICS LETTERS, 1999, 75 (22) : 3518 - 3520
[37] Theoretical Investigation of the Effect of Growth Orientation on Indium Incorporation Efficiency during InGaN Thin Film Growth by Metal-Organic Vapor Phase Epitaxy
Yayama, Tomoe
Kangawa, Yoshihiro
Kakimoto, Koichi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
[38] Strained lattice organic thin film growth by molecular beam epitaxy
Nakayama, T
Tanaka, S
Aoki, SY
MOLECULAR CRYSTALS AND LIQUID CRYSTALS SCIENCE AND TECHNOLOGY SECTION A-MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 1996, 276 : 267 - 271
[39] Numerical simulation of film growth during molecular-beam epitaxy
Evtikhov, M. G.
Nikitov, S. A.
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2007, 52 (08) : 860 - 864
[40] Numerical simulation of film growth during molecular-beam epitaxy
M. G. Evtikhov
S. A. Nikitov
Journal of Communications Technology and Electronics, 2007, 52 : 860 - 864

← 1 2 3 4 5 →