Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations

被引：55

作者：

Adelmann, C ^{[1
]}

Langer, R ^{[1
]}

Feuillet, G ^{[1
]}

Daudin, B ^{[1
]}

机构：

[1] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, SPMM, F-38054 Grenoble 9, France

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 22期

关键词：

D O I：

10.1063/1.125374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The indium incorporation in hexagonal InGaN grown by plasma assisted molecular-beam epitaxy is studied by means of reflection high-energy electron diffraction (RHEED) intensity oscillations. It is demonstrated that, in addition to being incorporated in the alloy, indium acts as a surfactant, significantly changing the gallium incorporation. This surfactant effect has to be taken into account to allow for a precise in situ determination of the alloy composition. The indium concentrations determined in situ by RHEED intensity oscillations were found to be in good agreement with ex situ results of Rutherford backscattering spectroscopy. This method also allows us to directly assess the maximum In incorporation as a function of the substrate temperature. (C) 1999 American Institute of Physics. [S0003-6951(99)00848-7].

引用

页码：3518 / 3520

页数：3

共 50 条

[1] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING THE GROWTH BY MOLECULAR-BEAM EPITAXY OF GAAS (111)A
FAHY, MR
SATO, K
JOYCE, BA
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (02) : 190 - 192
[2] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY ON ROTATING SUBSTRATES
VANDERWAGT, JPA
HARRIS, JS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1236 - 1238
[3] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING THE GROWTH BY MOLECULAR-BEAM EPITAXY OF GAAS(110) FILMS
NEAVE, JH
ZHANG, J
ZHANG, XM
FAWCETT, PN
JOYCE, BA
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (07) : 753 - 755
[4] INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING DISILANE GAS SOURCE MOLECULAR-BEAM EPITAXY
HIROI, M
KOYAMA, K
TATSUMI, T
HIRAYAMA, H
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (14) : 1723 - 1725
[5] INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING MOLECULAR-BEAM EPITAXY OF NI ON W(110)
KOZIOL, C
LILIENKAMP, G
BAUER, E
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (12) : 901 - 903
[6] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY GROWTH OF GALLIUM ANTIMONIDE, ALUMINUM ANTIMONIDE, AND INDIUM ARSENIDE
SUBBANNA, S
GAINES, J
TUTTLE, G
KROEMER, H
CHALMERS, S
ENGLISH, JH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 289 - 295
[7] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS AND ANISOTROPY ON VICINAL ALAS(001) DURING MOLECULAR-BEAM EPITAXY
SHITARA, T
NEAVE, JH
JOYCE, BA
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (14) : 1658 - 1660
[8] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH
CLARKE, S
VVEDENSKY, DD
[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (21) : 2235 - 2238
[9] MECHANISM OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY ON A SI(001) SURFACE
MITSUISHI, K
HASHIMOTO, I
SAKAMOTO, K
SAKAMOTO, T
WATANABE, K
[J]. PHYSICAL REVIEW B, 1995, 52 (15): : 10748 - 10751
[10] OBSERVATIONS ON INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAS SOURCE MOLECULAR-BEAM EPITAXY OF INP
MORISHITA, Y
MARUNO, S
GOTODA, M
NOMURA, Y
OGATA, H
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (01) : 42 - 44

← 1 2 3 4 5 →