Effect of indium droplets on growth of InGaN film by molecular beam epitaxy

被引：12

作者：

Zheng, Xiantong ^{[1
]}

Liang, Hongwei ^{[1
]}

Wang, Ping ^{[2
]}

Sun, Xiaoxiao ^{[2
]}

Chen, Zhaoying ^{[2
]}

Wang, Tao ^{[2
]}

Sheng, Bowen ^{[2
]}

Wang, Yixin ^{[2
]}

Chen, Ling ^{[2
]}

Wang, Ding ^{[2
]}

Rong, Xin ^{[2
]}

Li, Mo ^{[4
]}

Zhang, Jian ^{[4
]}

Wang, Xinqiang ^{[2
,3
]}

机构：

[1] Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China

[2] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[3] Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China

[4] CAEP, Microsyst & Terahertz Res Ctr, 596 Yinhe Rd, Chengdu 610200, Sichuan, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 113卷

关键词：

In droplet; InGaN; MBE; QUANTUM-WELLS;

D O I：

10.1016/j.spmi.2017.11.053

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Effect of indium (In) droplets on InGaN thin films grown by molecular beam epitaxy (MBE) has been investigated. The surface of InGaN covered by In droplets shows a smoother topography than that without droplets, indicating that the presence of In droplets is beneficial to the two dimensional growth. Beneath the In droplets, many ring-like structures are observed. The arrangement of these "ring" shows the movement of the In droplets during the InGaN growth. A qualitative growth model is proposed to explain the evolution of the InGaN surface morphology in In-droplet-induced-epitaxy process, giving an explanation that a local vapor-liquid-solid (VLS) system is preferentially formed at the edge of the droplets, leading to a high growth rate. Furthermore, the energy dispersive Xray spectroscopy results reveal that the relatively higher In/Ga flux ratio in the region covered by the In droplet results in a locally higher In content. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：650 / 656

页数：7

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