Self-aligned TiSi2/Si heteronanocrystal nonvolatile memory

被引：32

作者：

Zhu, Y ^{[1
]}

Zhao, DT ^{[1
]}

Li, RG ^{[1
]}

Liu, JL ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Elect Engn, Quantum Struct Lab, Riverside, CA 92521 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 10期

关键词：

D O I：

10.1063/1.2183815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The titanium silicide/silicon (TiSi2/Si) heteronanocrystals are fabricated on SiO2 thin films. The metal-oxide-semiconductor structure embedding the TiSi2/Si heteronanocrystals shows superior performance over the Si dot device. The charge loss rate in the TiSi2/Si heteronanocrystal device is 7.5 times less than that of the Si dot device. It is also found that the TiSi2/Si heteronanocrystal device has wider memory window than the Si dot counterpart. (c) 2006 American Institute of Physics.

引用

页数：3

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